Effects of annealing in oxygen on electrical properties of AlGaN/GaN heterostructures grown on Si

A. Y. Polyakov; N. B. Smirnov; Min Woo Ha; Cheol Koo Hahn; E. A. Kozhukhova; A. V. Govorkov; R. V. Ryzhuk; N. I. Kargin; Han Su Cho; In Hwan Lee

doi:10.1016/j.jallcom.2013.04.020

Effects of annealing in oxygen on electrical properties of AlGaN/GaN heterostructures grown on Si

A. Y. Polyakov, N. B. Smirnov, Min Woo Ha, Cheol Koo Hahn, E. A. Kozhukhova, A. V. Govorkov, R. V. Ryzhuk, N. I. Kargin, Han Su Cho, In Hwan Lee

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

We investigated the effects of oxygen annealing on electrical characteristics of AlGaN/GaN heterostructures grown on Si by metalorganic chemical vapor deposition. It was shown that such treatment suppresses parasitic tunneling leakage current due to surface states or dislocations, decreases the threshold voltage corresponding to depletion of the two-dimensional electron gas at the AlGaN interface, and increases the effective interdevice isolation resistance. The suppression of the leakage current is explained by oxygen passivation of the empty states at the surface of the AlGaN barrier. Oxygen diffusion along dislocations and passivation of dislocation related states also could play a role. The decreased threshold voltage is attributed to the increased concentration of possibly oxygen related deep traps near the AlGaN/GaN interface. The increase in the GaN buffer resistivity after annealing is ascribed to the annihilation of the 0.38 eV deep electron traps believed to be introduced at the surface of GaN during mesa formation by dry etching.

Original language	English
Pages (from-to)	17-23
Number of pages	7
Journal	Journal of Alloys and Compounds
Volume	575
DOIs	https://doi.org/10.1016/j.jallcom.2013.04.020
Publication status	Published - 2013
Externally published	Yes

Bibliographical note

Funding Information:
The work at IRM was supported in part by the Ministry of Education and Science of Russian Federation through a subcontract to NRNU (MIFI). The work at NRNU (MIFI), Moscow, was supported by the Ministry of Education and Science of Russian Federation under contract #16.523.12.3010 of June 5 2012. The work at Chonbuk National University was supported by the National Research Foundation of Korea (NRF) funded by the Korea government (MEST) (2010-0024973). The work at KETI was partly supported by the IT R&D program of MKE/KEIT (2011101050017B).

Keywords

AlGaN/GaN HEMT
Deep traps
Leakage current
Oxygen annealing

ASJC Scopus subject areas

Mechanics of Materials
Mechanical Engineering
Metals and Alloys
Materials Chemistry

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10.1016/j.jallcom.2013.04.020

Cite this

@article{17aacef086644ce9860fb82f4b8ac3a2,

title = "Effects of annealing in oxygen on electrical properties of AlGaN/GaN heterostructures grown on Si",

abstract = "We investigated the effects of oxygen annealing on electrical characteristics of AlGaN/GaN heterostructures grown on Si by metalorganic chemical vapor deposition. It was shown that such treatment suppresses parasitic tunneling leakage current due to surface states or dislocations, decreases the threshold voltage corresponding to depletion of the two-dimensional electron gas at the AlGaN interface, and increases the effective interdevice isolation resistance. The suppression of the leakage current is explained by oxygen passivation of the empty states at the surface of the AlGaN barrier. Oxygen diffusion along dislocations and passivation of dislocation related states also could play a role. The decreased threshold voltage is attributed to the increased concentration of possibly oxygen related deep traps near the AlGaN/GaN interface. The increase in the GaN buffer resistivity after annealing is ascribed to the annihilation of the 0.38 eV deep electron traps believed to be introduced at the surface of GaN during mesa formation by dry etching.",

keywords = "AlGaN/GaN HEMT, Deep traps, Leakage current, Oxygen annealing",

author = "Polyakov, {A. Y.} and Smirnov, {N. B.} and Ha, {Min Woo} and Hahn, {Cheol Koo} and Kozhukhova, {E. A.} and Govorkov, {A. V.} and Ryzhuk, {R. V.} and Kargin, {N. I.} and Cho, {Han Su} and Lee, {In Hwan}",

note = "Funding Information: The work at IRM was supported in part by the Ministry of Education and Science of Russian Federation through a subcontract to NRNU (MIFI). The work at NRNU (MIFI), Moscow, was supported by the Ministry of Education and Science of Russian Federation under contract #16.523.12.3010 of June 5 2012. The work at Chonbuk National University was supported by the National Research Foundation of Korea (NRF) funded by the Korea government (MEST) (2010-0024973). The work at KETI was partly supported by the IT R&D program of MKE/KEIT (2011101050017B).",

year = "2013",

doi = "10.1016/j.jallcom.2013.04.020",

language = "English",

volume = "575",

pages = "17--23",

journal = "Journal of Alloys and Compounds",

issn = "0925-8388",

publisher = "Elsevier BV",

}

TY - JOUR

T1 - Effects of annealing in oxygen on electrical properties of AlGaN/GaN heterostructures grown on Si

AU - Polyakov, A. Y.

AU - Smirnov, N. B.

AU - Ha, Min Woo

AU - Hahn, Cheol Koo

AU - Kozhukhova, E. A.

AU - Govorkov, A. V.

AU - Ryzhuk, R. V.

AU - Kargin, N. I.

AU - Cho, Han Su

AU - Lee, In Hwan

N1 - Funding Information: The work at IRM was supported in part by the Ministry of Education and Science of Russian Federation through a subcontract to NRNU (MIFI). The work at NRNU (MIFI), Moscow, was supported by the Ministry of Education and Science of Russian Federation under contract #16.523.12.3010 of June 5 2012. The work at Chonbuk National University was supported by the National Research Foundation of Korea (NRF) funded by the Korea government (MEST) (2010-0024973). The work at KETI was partly supported by the IT R&D program of MKE/KEIT (2011101050017B).

PY - 2013

Y1 - 2013

N2 - We investigated the effects of oxygen annealing on electrical characteristics of AlGaN/GaN heterostructures grown on Si by metalorganic chemical vapor deposition. It was shown that such treatment suppresses parasitic tunneling leakage current due to surface states or dislocations, decreases the threshold voltage corresponding to depletion of the two-dimensional electron gas at the AlGaN interface, and increases the effective interdevice isolation resistance. The suppression of the leakage current is explained by oxygen passivation of the empty states at the surface of the AlGaN barrier. Oxygen diffusion along dislocations and passivation of dislocation related states also could play a role. The decreased threshold voltage is attributed to the increased concentration of possibly oxygen related deep traps near the AlGaN/GaN interface. The increase in the GaN buffer resistivity after annealing is ascribed to the annihilation of the 0.38 eV deep electron traps believed to be introduced at the surface of GaN during mesa formation by dry etching.

AB - We investigated the effects of oxygen annealing on electrical characteristics of AlGaN/GaN heterostructures grown on Si by metalorganic chemical vapor deposition. It was shown that such treatment suppresses parasitic tunneling leakage current due to surface states or dislocations, decreases the threshold voltage corresponding to depletion of the two-dimensional electron gas at the AlGaN interface, and increases the effective interdevice isolation resistance. The suppression of the leakage current is explained by oxygen passivation of the empty states at the surface of the AlGaN barrier. Oxygen diffusion along dislocations and passivation of dislocation related states also could play a role. The decreased threshold voltage is attributed to the increased concentration of possibly oxygen related deep traps near the AlGaN/GaN interface. The increase in the GaN buffer resistivity after annealing is ascribed to the annihilation of the 0.38 eV deep electron traps believed to be introduced at the surface of GaN during mesa formation by dry etching.

KW - AlGaN/GaN HEMT

KW - Deep traps

KW - Leakage current

KW - Oxygen annealing

UR - http://www.scopus.com/inward/record.url?scp=84877090601&partnerID=8YFLogxK

U2 - 10.1016/j.jallcom.2013.04.020

DO - 10.1016/j.jallcom.2013.04.020

M3 - Article

AN - SCOPUS:84877090601

SN - 0925-8388

VL - 575

SP - 17

EP - 23

JO - Journal of Alloys and Compounds

JF - Journal of Alloys and Compounds

ER -

Effects of annealing in oxygen on electrical properties of AlGaN/GaN heterostructures grown on Si

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

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