Effects of annealing process on dielectric properties of (Ba,Sr)TiO 3 thin films grown by RF magnetron sputtering

Jong Yoon Ha; Ji Won Choi; Chong Yun Kang; S. F. Karmanenko; Seok Jin Yoon; Doo Jin Choi; Hyun Jai Kim

doi:10.1143/JJAP.44.L1196

Effects of annealing process on dielectric properties of (Ba,Sr)TiO ₃ thin films grown by RF magnetron sputtering

Jong Yoon Ha, Ji Won Choi, Chong Yun Kang, S. F. Karmanenko, Seok Jin Yoon, Doo Jin Choi, Hyun Jai Kim

KU-KIST Graduate School of Converging Science and Technology

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

Single phase thin films of (Ba_0.5Sr_0.5)TiO ₃ have been prepared by single target RF magnetron sputtering. Through post-annealing process in box furnace at 1100°C for 1 h, we have been able to improve the dielectric properties; dielectric permittivity, dielectric loss, and tunability. The change in dielectric properties before and after post-annealing is attributed to the change in film strain and the contraction in film lattice.

Original language	English
Pages (from-to)	L1196-L1198
Journal	Japanese Journal of Applied Physics, Part 2: Letters
Volume	44
Issue number	37-41
DOIs	https://doi.org/10.1143/JJAP.44.L1196
Publication status	Published - 2005 Sept 30

Keywords

BST
Ferroelectric
Microwave
RF sputtering
Tunable devices

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

Access to Document

10.1143/JJAP.44.L1196

Cite this

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title = "Effects of annealing process on dielectric properties of (Ba,Sr)TiO 3 thin films grown by RF magnetron sputtering",

abstract = "Single phase thin films of (Ba0.5Sr0.5)TiO 3 have been prepared by single target RF magnetron sputtering. Through post-annealing process in box furnace at 1100°C for 1 h, we have been able to improve the dielectric properties; dielectric permittivity, dielectric loss, and tunability. The change in dielectric properties before and after post-annealing is attributed to the change in film strain and the contraction in film lattice.",

keywords = "BST, Ferroelectric, Microwave, RF sputtering, Tunable devices",

author = "Ha, {Jong Yoon} and Choi, {Ji Won} and Kang, {Chong Yun} and Karmanenko, {S. F.} and Yoon, {Seok Jin} and Choi, {Doo Jin} and Kim, {Hyun Jai}",

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T1 - Effects of annealing process on dielectric properties of (Ba,Sr)TiO 3 thin films grown by RF magnetron sputtering

AU - Ha, Jong Yoon

AU - Choi, Ji Won

AU - Kang, Chong Yun

AU - Karmanenko, S. F.

AU - Yoon, Seok Jin

AU - Choi, Doo Jin

AU - Kim, Hyun Jai

PY - 2005/9/30

Y1 - 2005/9/30

N2 - Single phase thin films of (Ba0.5Sr0.5)TiO 3 have been prepared by single target RF magnetron sputtering. Through post-annealing process in box furnace at 1100°C for 1 h, we have been able to improve the dielectric properties; dielectric permittivity, dielectric loss, and tunability. The change in dielectric properties before and after post-annealing is attributed to the change in film strain and the contraction in film lattice.

AB - Single phase thin films of (Ba0.5Sr0.5)TiO 3 have been prepared by single target RF magnetron sputtering. Through post-annealing process in box furnace at 1100°C for 1 h, we have been able to improve the dielectric properties; dielectric permittivity, dielectric loss, and tunability. The change in dielectric properties before and after post-annealing is attributed to the change in film strain and the contraction in film lattice.

KW - BST

KW - Ferroelectric

KW - Microwave

KW - RF sputtering

KW - Tunable devices

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JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

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