ZnO films were grown on (0001) sapphire substrates by using ion beam deposition. The effects of Ar/O2 gas ratio in the ion gun on the properties of the ZnO films were investigated. The films were deposited using various Ar/O2 gas ratios at room temperature (RT) and 400 °C. All the ZnO films grown at RT showed a smooth and homogeneous surface with compressive strain. For an Ar/O2 gas ratio of 7/3, the ZnO film showed the lowest surface roughness and strain among the samples. At a higher substrate temperature of 400 °C, the morphologies and the structural properties were more sensitive to the Ar/O2 gas ratios. Photoluminescence measurements showed that the samples deposited at RT exhibited strong deep level emissions in the visible range and near band edge emissions. On the other hand, the films prepared at 400 °C displayed weaker defectrelated emissions. The present work suggests that the Ar/O2 gas ratio affects the stoichiometry and, thus, the structural and optical properties of the ZnO films.
|Number of pages||4|
|Journal||Journal of the Korean Physical Society|
|Publication status||Published - 2010 Dec|
- Gas ratio
- Ion beam deposition
ASJC Scopus subject areas
- Physics and Astronomy(all)