Effects of Ar/O2 gas ratio on ZnO films prepared by using Ion beam deposition

Myoung Kim; Ju Won Jeon; Dae Woo Jeon; Trilochan Sahoo; Mi Hee Lee; Ru Da Lee; Lee Woon Jang; Jin Woo Ju; In Hwan Lee; Young Je Jo; Joon Seop Kwak

doi:10.3938/jkps.57.1871

Effects of Ar/O₂ gas ratio on ZnO films prepared by using Ion beam deposition

Myoung Kim, Ju Won Jeon, Dae Woo Jeon, Trilochan Sahoo, Mi Hee Lee, Ru Da Lee, Lee Woon Jang, Jin Woo Ju, In Hwan Lee, Young Je Jo, Joon Seop Kwak

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

ZnO films were grown on (0001) sapphire substrates by using ion beam deposition. The effects of Ar/O₂ gas ratio in the ion gun on the properties of the ZnO films were investigated. The films were deposited using various Ar/O₂ gas ratios at room temperature (RT) and 400 °C. All the ZnO films grown at RT showed a smooth and homogeneous surface with compressive strain. For an Ar/O₂ gas ratio of 7/3, the ZnO film showed the lowest surface roughness and strain among the samples. At a higher substrate temperature of 400 °C, the morphologies and the structural properties were more sensitive to the Ar/O₂ gas ratios. Photoluminescence measurements showed that the samples deposited at RT exhibited strong deep level emissions in the visible range and near band edge emissions. On the other hand, the films prepared at 400 °C displayed weaker defectrelated emissions. The present work suggests that the Ar/O₂ gas ratio affects the stoichiometry and, thus, the structural and optical properties of the ZnO films.

Original language	English
Pages (from-to)	1871-1874
Number of pages	4
Journal	Journal of the Korean Physical Society
Volume	57
Issue number	61
DOIs	https://doi.org/10.3938/jkps.57.1871
Publication status	Published - 2010 Dec
Externally published	Yes

Keywords

Gas ratio
Ion beam deposition
Photoluminescence
ZnO

ASJC Scopus subject areas

General Physics and Astronomy

Access to Document

10.3938/jkps.57.1871

Cite this

@article{8f3f914059614323bf0959400f750351,

title = "Effects of Ar/O2 gas ratio on ZnO films prepared by using Ion beam deposition",

abstract = "ZnO films were grown on (0001) sapphire substrates by using ion beam deposition. The effects of Ar/O2 gas ratio in the ion gun on the properties of the ZnO films were investigated. The films were deposited using various Ar/O2 gas ratios at room temperature (RT) and 400 °C. All the ZnO films grown at RT showed a smooth and homogeneous surface with compressive strain. For an Ar/O2 gas ratio of 7/3, the ZnO film showed the lowest surface roughness and strain among the samples. At a higher substrate temperature of 400 °C, the morphologies and the structural properties were more sensitive to the Ar/O2 gas ratios. Photoluminescence measurements showed that the samples deposited at RT exhibited strong deep level emissions in the visible range and near band edge emissions. On the other hand, the films prepared at 400 °C displayed weaker defectrelated emissions. The present work suggests that the Ar/O2 gas ratio affects the stoichiometry and, thus, the structural and optical properties of the ZnO films.",

keywords = "Gas ratio, Ion beam deposition, Photoluminescence, ZnO",

author = "Myoung Kim and Jeon, {Ju Won} and Jeon, {Dae Woo} and Trilochan Sahoo and Lee, {Mi Hee} and Lee, {Ru Da} and Jang, {Lee Woon} and Ju, {Jin Woo} and Lee, {In Hwan} and Jo, {Young Je} and Kwak, {Joon Seop}",

year = "2010",

month = dec,

doi = "10.3938/jkps.57.1871",

language = "English",

volume = "57",

pages = "1871--1874",

journal = "Journal of the Korean Physical Society",

issn = "0374-4884",

publisher = "Korean Physical Society",

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TY - JOUR

T1 - Effects of Ar/O2 gas ratio on ZnO films prepared by using Ion beam deposition

AU - Kim, Myoung

AU - Jeon, Ju Won

AU - Jeon, Dae Woo

AU - Sahoo, Trilochan

AU - Lee, Mi Hee

AU - Lee, Ru Da

AU - Jang, Lee Woon

AU - Ju, Jin Woo

AU - Lee, In Hwan

AU - Jo, Young Je

AU - Kwak, Joon Seop

PY - 2010/12

Y1 - 2010/12

N2 - ZnO films were grown on (0001) sapphire substrates by using ion beam deposition. The effects of Ar/O2 gas ratio in the ion gun on the properties of the ZnO films were investigated. The films were deposited using various Ar/O2 gas ratios at room temperature (RT) and 400 °C. All the ZnO films grown at RT showed a smooth and homogeneous surface with compressive strain. For an Ar/O2 gas ratio of 7/3, the ZnO film showed the lowest surface roughness and strain among the samples. At a higher substrate temperature of 400 °C, the morphologies and the structural properties were more sensitive to the Ar/O2 gas ratios. Photoluminescence measurements showed that the samples deposited at RT exhibited strong deep level emissions in the visible range and near band edge emissions. On the other hand, the films prepared at 400 °C displayed weaker defectrelated emissions. The present work suggests that the Ar/O2 gas ratio affects the stoichiometry and, thus, the structural and optical properties of the ZnO films.

AB - ZnO films were grown on (0001) sapphire substrates by using ion beam deposition. The effects of Ar/O2 gas ratio in the ion gun on the properties of the ZnO films were investigated. The films were deposited using various Ar/O2 gas ratios at room temperature (RT) and 400 °C. All the ZnO films grown at RT showed a smooth and homogeneous surface with compressive strain. For an Ar/O2 gas ratio of 7/3, the ZnO film showed the lowest surface roughness and strain among the samples. At a higher substrate temperature of 400 °C, the morphologies and the structural properties were more sensitive to the Ar/O2 gas ratios. Photoluminescence measurements showed that the samples deposited at RT exhibited strong deep level emissions in the visible range and near band edge emissions. On the other hand, the films prepared at 400 °C displayed weaker defectrelated emissions. The present work suggests that the Ar/O2 gas ratio affects the stoichiometry and, thus, the structural and optical properties of the ZnO films.

KW - Gas ratio

KW - Ion beam deposition

KW - Photoluminescence

KW - ZnO

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