Effects of bottom electrode and environmental insulator on thermal distribution of edge contact-type PRAM cell

Minsoo Youm; Yong Tae Kim; Man Young Sung

doi:10.1016/j.mejo.2007.07.120

Effects of bottom electrode and environmental insulator on thermal distribution of edge contact-type PRAM cell

Minsoo Youm, Yong Tae Kim, Man Young Sung

* Honorary professors

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

Thermal characteristics of edge contact-type phase change random access memory cells have been investigated with different combinations of bottom electrode and insulator such as Ti and SiO₂, Ti and AlN, and TiN and AlN. At the same melting temperature on the programmable point of Ge₂Sb₂Te₅, we have determined heat flux for each combination: for the Ti and SiO₂, the heat flux is 3.5×10⁵ J/mm² s, for the Ti and AlN, and the TiN and AlN, they are 1.7×10⁶ and 1.9×10⁴ J/mm² s, respectively. These simulated results mean that the combination of TiN and AlN is the most effective for the fast response of phase changing from the amorphous to the crystalline and vice versa since the TiN has lower thermal conductivity than the Ti and the AlN has higher thermal conductivity than SiO₂.

Original language	English
Pages (from-to)	1034-1037
Number of pages	4
Journal	Microelectronics Journal
Volume	38
Issue number	10-11
DOIs	https://doi.org/10.1016/j.mejo.2007.07.120
Publication status	Published - 2007 Oct

Bibliographical note

Funding Information:
This work was supported by the Samsung Electronics and MOCIE under the contract of National Research Project for the Phase-change Random Access Memory Development.

Keywords

Chalcogenide
GeSbTe
Phase change memory

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Surfaces, Coatings and Films
Electrical and Electronic Engineering

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10.1016/j.mejo.2007.07.120

Cite this

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title = "Effects of bottom electrode and environmental insulator on thermal distribution of edge contact-type PRAM cell",

abstract = "Thermal characteristics of edge contact-type phase change random access memory cells have been investigated with different combinations of bottom electrode and insulator such as Ti and SiO2, Ti and AlN, and TiN and AlN. At the same melting temperature on the programmable point of Ge2Sb2Te5, we have determined heat flux for each combination: for the Ti and SiO2, the heat flux is 3.5×105 J/mm2 s, for the Ti and AlN, and the TiN and AlN, they are 1.7×106 and 1.9×104 J/mm2 s, respectively. These simulated results mean that the combination of TiN and AlN is the most effective for the fast response of phase changing from the amorphous to the crystalline and vice versa since the TiN has lower thermal conductivity than the Ti and the AlN has higher thermal conductivity than SiO2.",

keywords = "Chalcogenide, GeSbTe, Phase change memory",

author = "Minsoo Youm and Kim, {Yong Tae} and Sung, {Man Young}",

note = "Funding Information: This work was supported by the Samsung Electronics and MOCIE under the contract of National Research Project for the Phase-change Random Access Memory Development.",

year = "2007",

month = oct,

doi = "10.1016/j.mejo.2007.07.120",

language = "English",

volume = "38",

pages = "1034--1037",

journal = "Microelectronics Journal",

issn = "0026-2692",

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TY - JOUR

T1 - Effects of bottom electrode and environmental insulator on thermal distribution of edge contact-type PRAM cell

AU - Youm, Minsoo

AU - Kim, Yong Tae

AU - Sung, Man Young

N1 - Funding Information: This work was supported by the Samsung Electronics and MOCIE under the contract of National Research Project for the Phase-change Random Access Memory Development.

PY - 2007/10

Y1 - 2007/10

N2 - Thermal characteristics of edge contact-type phase change random access memory cells have been investigated with different combinations of bottom electrode and insulator such as Ti and SiO2, Ti and AlN, and TiN and AlN. At the same melting temperature on the programmable point of Ge2Sb2Te5, we have determined heat flux for each combination: for the Ti and SiO2, the heat flux is 3.5×105 J/mm2 s, for the Ti and AlN, and the TiN and AlN, they are 1.7×106 and 1.9×104 J/mm2 s, respectively. These simulated results mean that the combination of TiN and AlN is the most effective for the fast response of phase changing from the amorphous to the crystalline and vice versa since the TiN has lower thermal conductivity than the Ti and the AlN has higher thermal conductivity than SiO2.

AB - Thermal characteristics of edge contact-type phase change random access memory cells have been investigated with different combinations of bottom electrode and insulator such as Ti and SiO2, Ti and AlN, and TiN and AlN. At the same melting temperature on the programmable point of Ge2Sb2Te5, we have determined heat flux for each combination: for the Ti and SiO2, the heat flux is 3.5×105 J/mm2 s, for the Ti and AlN, and the TiN and AlN, they are 1.7×106 and 1.9×104 J/mm2 s, respectively. These simulated results mean that the combination of TiN and AlN is the most effective for the fast response of phase changing from the amorphous to the crystalline and vice versa since the TiN has lower thermal conductivity than the Ti and the AlN has higher thermal conductivity than SiO2.

KW - Chalcogenide

KW - GeSbTe

KW - Phase change memory

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DO - 10.1016/j.mejo.2007.07.120

M3 - Article

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SN - 0026-2692

VL - 38

SP - 1034

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JO - Microelectronics Journal

JF - Microelectronics Journal

IS - 10-11

ER -

Effects of bottom electrode and environmental insulator on thermal distribution of edge contact-type PRAM cell

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

Access to Document

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