The effects of addition of CCl 4 and CBr 4 during organometallic vapor phase epitaxy (OMPVE) of GaInO were investigated. The addition of Br in small concentrations decreased the amount of CuPt ordering via transmission electron diffraction and photoluminescence measurements. Both Cl and Br significantly roughen the surface morphology. The results from atomic force microscopy show that facets formed increased in height and angle to (001) growth surface with increase in surfactant concentration.
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ASJC Scopus subject areas
- General Physics and Astronomy