Effects of channel doping profile on electrical characteristics of impact ionization MOS

Sang Joon Hwang; Jee Young Yoon; Ey Goo Kang; Man Young Sung

Effects of channel doping profile on electrical characteristics of impact ionization MOS

Sang Joon Hwang, Jee Young Yoon, Ey Goo Kang, Man Young Sung

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Original language	English
Title of host publication	2005 International Semiconductor Device Research Symposium
Pages	103-104
Number of pages	2
Publication status	Published - 2005
Event	2005 International Semiconductor Device Research Symposium - Bethesda, MD, United States Duration: 2005 Dec 7 → 2005 Dec 9

Publication series

Name	2005 International Semiconductor Device Research Symposium
Volume	2005

Other

Other	2005 International Semiconductor Device Research Symposium
Country/Territory	United States
City	Bethesda, MD
Period	05/12/7 → 05/12/9

ASJC Scopus subject areas

General Engineering

Cite this

Effects of channel doping profile on electrical characteristics of impact ionization MOS. / Hwang, Sang Joon; Yoon, Jee Young; Kang, Ey Goo et al.
2005 International Semiconductor Device Research Symposium. 2005. p. 103-104 1595999 (2005 International Semiconductor Device Research Symposium; Vol. 2005).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Hwang, SJ, Yoon, JY, Kang, EG & Sung, MY 2005, Effects of channel doping profile on electrical characteristics of impact ionization MOS. in 2005 International Semiconductor Device Research Symposium., 1595999, 2005 International Semiconductor Device Research Symposium, vol. 2005, pp. 103-104, 2005 International Semiconductor Device Research Symposium, Bethesda, MD, United States, 05/12/7.

@inproceedings{eb8c7781263240aba4d25c11b8b464ba,

title = "Effects of channel doping profile on electrical characteristics of impact ionization MOS",

author = "Hwang, {Sang Joon} and Yoon, {Jee Young} and Kang, {Ey Goo} and Sung, {Man Young}",

year = "2005",

language = "English",

isbn = "1424400848",

series = "2005 International Semiconductor Device Research Symposium",

pages = "103--104",

booktitle = "2005 International Semiconductor Device Research Symposium",

note = "2005 International Semiconductor Device Research Symposium ; Conference date: 07-12-2005 Through 09-12-2005",

}

TY - GEN

T1 - Effects of channel doping profile on electrical characteristics of impact ionization MOS

AU - Hwang, Sang Joon

AU - Yoon, Jee Young

AU - Kang, Ey Goo

AU - Sung, Man Young

PY - 2005

Y1 - 2005

UR - http://www.scopus.com/inward/record.url?scp=33847183139&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33847183139&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:33847183139

SN - 1424400848

SN - 9781424400843

T3 - 2005 International Semiconductor Device Research Symposium

SP - 103

EP - 104

BT - 2005 International Semiconductor Device Research Symposium

T2 - 2005 International Semiconductor Device Research Symposium

Y2 - 7 December 2005 through 9 December 2005

ER -

Effects of channel doping profile on electrical characteristics of impact ionization MOS

Publication series

Other

ASJC Scopus subject areas

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Cite this