Effects of Co addition on magneto-transport properties of magnetic tunnel junction consisting of CoFeB or CoFeSiB free layer

Su Jung Noh, Byong Sun Chun, Young Keun Kim, Tianxing Wang

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)

Abstract

Amorphous ferromagnetic CoFeB and CoFeSiB layers with various Co concentrations were employed as free layers of magnetic tunnel junctions (MTJs), and their magnetization switching performances were compared. Both analytical measurements and micromagnetic modeling efforts were carried out to understand the dependence of magnetization switching field (Hsw) on Co concentration. In overall, the CoFeSiB free layered MTJs showed a lower H sw compared to that of the CoFeB ones. This is due to the fact that CoFeSiB possesses a lower saturation magnetization than CoFeB and, moreover, its magnetization switching process shows coherent switching.

Original languageEnglish
Article number07D346
JournalJournal of Applied Physics
Volume109
Issue number7
DOIs
Publication statusPublished - 2011 Apr 1

Bibliographical note

Funding Information:
This work was supported by the degree and research center (DRC) program funded by the Korea Research Council of Fundamental Science and Technology (KRCF), the IT R&D program of MKE/KEIT (Grant No. 2009-F-004-01), and Samsung Electronics (Grant No. C6A2001). FIG. 1. (Color online) Co concentration dependence of the magneto-transport properties (a) CoFeB and (b) CoFeSiB free layered MTJs. Where CoFeSiB free layered MTJs showed a lower magnetization switching field than the CoFeB free layered ones. FIG. 2. (Color online) Micromagnetics results of CoFeSiB single layer (a) hysteresis, (b) magnetic moment configurations for 1 μm cell sizes and (c) hysteresis, (d) magnetic moment configurations for 150 nm cell size. The magnetization switching process shows coherent rotation and a magnetic single domain is formed at the magnetic field just before complete magnetization reversal. FIG. 3. (Color online) Micromagnetics results of CoFeB single layer (a) hysteresis, (b) magnetic moment configurations for 1 μm cell sizes and (c) hysteresis, (d) magnetic moment configurations for 150 nm cell size. The magnetization switching process shows incoherent rotation and a magnetic multi domain is formed at the magnetic field just before complete magnetization reversal.

ASJC Scopus subject areas

  • General Physics and Astronomy

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