Heterojunction-based organic light-emitting field-effect transistors (OLEFETs) with a top-contact, long-channel geometry were fabricated and comparatively characterized. The neutral cluster beam deposition (NCBD) method was used to successively deposit two layers of p-type pentacene and n-type tris(8-hydroxyquinoline)aluminum (Alq3). For doped OLEFETs, 4-(dicyanomethylene)-2-methyl-6-(p-dimethylaminostyryl)-4H-pyran (DCM) was used as a highly fluorescent dye dopant to enhance the light-emission efficiency and change the emission color. OLEFETs revealed fine device characteristics based on deposition of highly crystalline active layers. The combination of the highly fluorescent DCM doping and asymmetric electrode configuration (Au and Li:Al or LiF/Al) exhibited efficient energy transfer and enhanced electroluminescence (EL) emission. The operating light-emission mechanisms were discussed based on EL photos acquired using a charge-coupled device (CCD) camera.
Bibliographical noteFunding Information:
This work was supported by a grant from the National Research Foundation (NRF) of Korea funded by the Ministry of Science, ICT and Future Planning (NRF2014R1A2A2A01005719), the Basic Science Research Program through the NRF funded by the Ministry of Education (NRF20100020209).
© 2016 American Chemical Society.
Copyright 2017 Elsevier B.V., All rights reserved.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Physical and Theoretical Chemistry
- Surfaces, Coatings and Films