Effects of downstream plasma exposure on β-Ga2O3 rectifiers

Xinyi Xia, Minghan Xian, Chaker Fares, Fan Ren, Junghun Kim, Jihyun Kim, Marko Tadjer, Stephen J. Pearton

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

Abstract

The effects of downstream plasma exposure with O2, N2 or CF4 discharges on Si-doped Ga2O3 Schottky diode forward and reverse current-voltage characteristics were investigated. The samples were exposed to discharges with rf power of 50 W plasma at a pressure of 400 mTorr and a fixed treatment time of 1 min to simulate dielectric layer removal, photoresist ashing or surface cleaning steps. Schottky contacts were deposited through a shadow mask after exposure to avoid any changes to the surface. A Schottky barrier height of 1.1 eV was obtained for the reference sample without plasma treatment, with an ideality factor of 1.0. The diodes exposed to CF4 showed a 0.25 V shift from the I–V of the reference sample due to a Schottky barrier height lowering around 14%. The diodes showed a decrease of Schottky barrier height of 2.5 and 6.5% with O2 or N2 treatments, respectively. The effect of plasma exposure on the ideality factor of diodes treated with these plasmas was minimal; 0.2% for O2 and N2, 0.3% for CF4, respectively. The reverse leakage currents were 1.2, 2.2 and 4.8 μA cm-2 for the diodes treated with O2, and CF4, and N2 respectively. The effect of downstream plasma treatment on diode on-resistance and on-off ratio were also minimal. The changes observed are much less than caused by exposure to hydrogen-containing plasmas and indicate that downstream plasma stripping of films from Ga2O3 during device processing is a relatively benign approach.

Original languageEnglish
Article number065005
JournalECS Journal of Solid State Science and Technology
Volume10
Issue number6
DOIs
Publication statusPublished - 2021

Bibliographical note

Funding Information:
The work at UF was performed as part of Interaction of Ionizing Radiation with Matter University Research Alliance (IIRM-URA), sponsored by the Department of the Defense, Defense Threat Reduction Agency under award HDTRA1–20–2–0002. The content of the information does not necessarily reflect the position or the policy of the federal government, and no official endorsement should be inferred. The work at UF was also supported by NSF DMR 1856662 (James Edgar). The work at Korea University was supported by the National Research Foundation (NRF) of Korea (2020M3H4A3081799). The work at NRL was supported by the Office of Naval Research.

Publisher Copyright:
© 2021 The Electrochemical Society (“ECS”).

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

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