Effects of film thickness and annealing on the magnetic properties of GaMnAsP ferromagnetic semiconductor

Jihoon Chang; Seonghoon Choi; Kyung Jae Lee; Seul Ki Bac; Suho Choi; Phunvira Chongthanaphisut; Sanghoon Lee; Xinyu Liu; M. Dobrowolska; Jacek K. Furdyna

doi:10.1016/j.jcrysgro.2019.01.035

Effects of film thickness and annealing on the magnetic properties of GaMnAsP ferromagnetic semiconductor

Jihoon Chang, Seonghoon Choi, Kyung Jae Lee, Seul Ki Bac, Suho Choi, Phunvira Chongthanaphisut, Sanghoon Lee, Xinyu Liu, M. Dobrowolska, Jacek K. Furdyna

Department of Physics

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

We have investigated the magnetic properties of ferromagnetic semiconductor GaMnAsP films with two different thicknesses. Temperature scans of the resistance revealed that the Curie temperature was higher in the 50-nm GaMnAsP layer than in the 16-nm layer, and was increased in both layers after annealing. The Hall effect was measured during the magnetization reversal process to identify the anisotropy of the films. The hysteresis observed from the as-grown samples in anomalous Hall resistance measurements implied the presence of out-of-plane magnetic anisotropy in both samples. The out-of-plane magnetic anisotropy in both samples became much stronger after thermal annealing. Quantitative values of the magnetic anisotropy of the GaMnAsP films were obtained from angular dependent Hall effect measurements. By constructing magnetic anisotropy energy diagrams for the films, we clearly show the change of magnetic anisotropy depending on the film thickness and thermal annealing in GaMnAsP films.

Original language	English
Pages (from-to)	112-118
Number of pages	7
Journal	Journal of Crystal Growth
Volume	512
DOIs	https://doi.org/10.1016/j.jcrysgro.2019.01.035
Publication status	Published - 2019 Apr 15

Bibliographical note

Funding Information:
This research was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education ( 2018R1D1A1A02042965 ); by Ministry of Science ICT ( 2018R1A4A1024157 ); by a Korea University Future Research Grant; and by the National Science Foundation Grant DMR 1400432 .

Funding Information:
This research was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education (2018R1D1A1A02042965); by Ministry of Science ICT(2018R1A4A1024157); by a Korea University Future Research Grant; and by the National Science Foundation Grant DMR 1400432.

Publisher Copyright:
© 2019 Elsevier B.V.

Keywords

A1. Characterization
A3. Molecular beam epitaxy
A3. Multilayer
Anomalous hall effect
B2. Semiconducting III–V materials (GaMnAsP ferromagnetic semiconductors
Magnetic anisotropy
Planar hall effect
Tensile strain

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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10.1016/j.jcrysgro.2019.01.035

Cite this

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title = "Effects of film thickness and annealing on the magnetic properties of GaMnAsP ferromagnetic semiconductor",

abstract = "We have investigated the magnetic properties of ferromagnetic semiconductor GaMnAsP films with two different thicknesses. Temperature scans of the resistance revealed that the Curie temperature was higher in the 50-nm GaMnAsP layer than in the 16-nm layer, and was increased in both layers after annealing. The Hall effect was measured during the magnetization reversal process to identify the anisotropy of the films. The hysteresis observed from the as-grown samples in anomalous Hall resistance measurements implied the presence of out-of-plane magnetic anisotropy in both samples. The out-of-plane magnetic anisotropy in both samples became much stronger after thermal annealing. Quantitative values of the magnetic anisotropy of the GaMnAsP films were obtained from angular dependent Hall effect measurements. By constructing magnetic anisotropy energy diagrams for the films, we clearly show the change of magnetic anisotropy depending on the film thickness and thermal annealing in GaMnAsP films.",

keywords = "A1. Characterization, A3. Molecular beam epitaxy, A3. Multilayer, Anomalous hall effect, B2. Semiconducting III–V materials (GaMnAsP ferromagnetic semiconductors, Magnetic anisotropy, Planar hall effect, Tensile strain",

author = "Jihoon Chang and Seonghoon Choi and Lee, {Kyung Jae} and Bac, {Seul Ki} and Suho Choi and Phunvira Chongthanaphisut and Sanghoon Lee and Xinyu Liu and M. Dobrowolska and Furdyna, {Jacek K.}",

note = "Funding Information: This research was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education ( 2018R1D1A1A02042965 ); by Ministry of Science ICT ( 2018R1A4A1024157 ); by a Korea University Future Research Grant; and by the National Science Foundation Grant DMR 1400432 . Funding Information: This research was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education (2018R1D1A1A02042965); by Ministry of Science ICT(2018R1A4A1024157); by a Korea University Future Research Grant; and by the National Science Foundation Grant DMR 1400432. Publisher Copyright: {\textcopyright} 2019 Elsevier B.V.",

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doi = "10.1016/j.jcrysgro.2019.01.035",

language = "English",

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T1 - Effects of film thickness and annealing on the magnetic properties of GaMnAsP ferromagnetic semiconductor

AU - Chang, Jihoon

AU - Choi, Seonghoon

AU - Lee, Kyung Jae

AU - Bac, Seul Ki

AU - Choi, Suho

AU - Chongthanaphisut, Phunvira

AU - Lee, Sanghoon

AU - Liu, Xinyu

AU - Dobrowolska, M.

AU - Furdyna, Jacek K.

N1 - Funding Information: This research was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education ( 2018R1D1A1A02042965 ); by Ministry of Science ICT ( 2018R1A4A1024157 ); by a Korea University Future Research Grant; and by the National Science Foundation Grant DMR 1400432 . Funding Information: This research was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education (2018R1D1A1A02042965); by Ministry of Science ICT(2018R1A4A1024157); by a Korea University Future Research Grant; and by the National Science Foundation Grant DMR 1400432. Publisher Copyright: © 2019 Elsevier B.V.

PY - 2019/4/15

Y1 - 2019/4/15

N2 - We have investigated the magnetic properties of ferromagnetic semiconductor GaMnAsP films with two different thicknesses. Temperature scans of the resistance revealed that the Curie temperature was higher in the 50-nm GaMnAsP layer than in the 16-nm layer, and was increased in both layers after annealing. The Hall effect was measured during the magnetization reversal process to identify the anisotropy of the films. The hysteresis observed from the as-grown samples in anomalous Hall resistance measurements implied the presence of out-of-plane magnetic anisotropy in both samples. The out-of-plane magnetic anisotropy in both samples became much stronger after thermal annealing. Quantitative values of the magnetic anisotropy of the GaMnAsP films were obtained from angular dependent Hall effect measurements. By constructing magnetic anisotropy energy diagrams for the films, we clearly show the change of magnetic anisotropy depending on the film thickness and thermal annealing in GaMnAsP films.

AB - We have investigated the magnetic properties of ferromagnetic semiconductor GaMnAsP films with two different thicknesses. Temperature scans of the resistance revealed that the Curie temperature was higher in the 50-nm GaMnAsP layer than in the 16-nm layer, and was increased in both layers after annealing. The Hall effect was measured during the magnetization reversal process to identify the anisotropy of the films. The hysteresis observed from the as-grown samples in anomalous Hall resistance measurements implied the presence of out-of-plane magnetic anisotropy in both samples. The out-of-plane magnetic anisotropy in both samples became much stronger after thermal annealing. Quantitative values of the magnetic anisotropy of the GaMnAsP films were obtained from angular dependent Hall effect measurements. By constructing magnetic anisotropy energy diagrams for the films, we clearly show the change of magnetic anisotropy depending on the film thickness and thermal annealing in GaMnAsP films.

KW - A1. Characterization

KW - A3. Molecular beam epitaxy

KW - A3. Multilayer

KW - Anomalous hall effect

KW - B2. Semiconducting III–V materials (GaMnAsP ferromagnetic semiconductors

KW - Magnetic anisotropy

KW - Planar hall effect

KW - Tensile strain

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U2 - 10.1016/j.jcrysgro.2019.01.035

DO - 10.1016/j.jcrysgro.2019.01.035

M3 - Article

AN - SCOPUS:85061531490

SN - 0022-0248

VL - 512

SP - 112

EP - 118

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

ER -

Effects of film thickness and annealing on the magnetic properties of GaMnAsP ferromagnetic semiconductor

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

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