Effects of geometrically extended contact area on electrical properties in amorphous InGaZnO thin film transistors

Jae Sung Kim; Min Kyu Joo; Ming Xing Piao; Seung Eon Ahn; Yong Hee Choi; Junhong Na; Minju Shin; Man Joong Han; Ho Kyun Jang; Gyu Tae Kim

doi:10.1016/j.tsf.2014.02.026

Effects of geometrically extended contact area on electrical properties in amorphous InGaZnO thin film transistors

Jae Sung Kim, Min Kyu Joo, Ming Xing Piao, Seung Eon Ahn, Yong Hee Choi, Junhong Na, Minju Shin, Man Joong Han, Ho Kyun Jang, Gyu Tae Kim

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

To elucidate the effect of the contact geometry on the device performances, the amorphous InGaZnO field effect transistors with different contact areas were fabricated and compared by the transmission line method. Extended contact-area devices were found to have better electrical performances in field effect mobility and subthreshold swing than those of bar-shaped reference devices. These improvements in the device characteristics resulted from a significantly reduced contact resistance (R_c). From the comparison of specific contact resistivity and transfer length (L_T), the relationship between R_c and contact area including the contact width and the L_T was established and demonstrated that R_c is controllable by optimizing the contact area geometry.

Original language	English
Pages (from-to)	279-282
Number of pages	4
Journal	Thin Solid Films
Volume	558
DOIs	https://doi.org/10.1016/j.tsf.2014.02.026
Publication status	Published - 2014 May 2

Bibliographical note

Funding Information:
This work was supported by the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (Converging Research Center Program, 2013K000175 and Global Frontier Research Program, No. 2011-0031638 ).

Keywords

Amorphous oxide
Contact area
Contact resistance
InGaZnO
Specific contact resistivity
Thin film transistor
Transfer length
Transmission line method

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1016/j.tsf.2014.02.026

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title = "Effects of geometrically extended contact area on electrical properties in amorphous InGaZnO thin film transistors",

abstract = "To elucidate the effect of the contact geometry on the device performances, the amorphous InGaZnO field effect transistors with different contact areas were fabricated and compared by the transmission line method. Extended contact-area devices were found to have better electrical performances in field effect mobility and subthreshold swing than those of bar-shaped reference devices. These improvements in the device characteristics resulted from a significantly reduced contact resistance (Rc). From the comparison of specific contact resistivity and transfer length (LT), the relationship between Rc and contact area including the contact width and the LT was established and demonstrated that Rc is controllable by optimizing the contact area geometry.",

keywords = "Amorphous oxide, Contact area, Contact resistance, InGaZnO, Specific contact resistivity, Thin film transistor, Transfer length, Transmission line method",

author = "Kim, {Jae Sung} and Joo, {Min Kyu} and Piao, {Ming Xing} and Ahn, {Seung Eon} and Choi, {Yong Hee} and Junhong Na and Minju Shin and Han, {Man Joong} and Jang, {Ho Kyun} and Kim, {Gyu Tae}",

note = "Funding Information: This work was supported by the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (Converging Research Center Program, 2013K000175 and Global Frontier Research Program, No. 2011-0031638 ).",

year = "2014",

month = may,

day = "2",

doi = "10.1016/j.tsf.2014.02.026",

language = "English",

volume = "558",

pages = "279--282",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier B.V.",

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TY - JOUR

T1 - Effects of geometrically extended contact area on electrical properties in amorphous InGaZnO thin film transistors

AU - Kim, Jae Sung

AU - Joo, Min Kyu

AU - Piao, Ming Xing

AU - Ahn, Seung Eon

AU - Choi, Yong Hee

AU - Na, Junhong

AU - Shin, Minju

AU - Han, Man Joong

AU - Jang, Ho Kyun

AU - Kim, Gyu Tae

N1 - Funding Information: This work was supported by the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (Converging Research Center Program, 2013K000175 and Global Frontier Research Program, No. 2011-0031638 ).

PY - 2014/5/2

Y1 - 2014/5/2

N2 - To elucidate the effect of the contact geometry on the device performances, the amorphous InGaZnO field effect transistors with different contact areas were fabricated and compared by the transmission line method. Extended contact-area devices were found to have better electrical performances in field effect mobility and subthreshold swing than those of bar-shaped reference devices. These improvements in the device characteristics resulted from a significantly reduced contact resistance (Rc). From the comparison of specific contact resistivity and transfer length (LT), the relationship between Rc and contact area including the contact width and the LT was established and demonstrated that Rc is controllable by optimizing the contact area geometry.

AB - To elucidate the effect of the contact geometry on the device performances, the amorphous InGaZnO field effect transistors with different contact areas were fabricated and compared by the transmission line method. Extended contact-area devices were found to have better electrical performances in field effect mobility and subthreshold swing than those of bar-shaped reference devices. These improvements in the device characteristics resulted from a significantly reduced contact resistance (Rc). From the comparison of specific contact resistivity and transfer length (LT), the relationship between Rc and contact area including the contact width and the LT was established and demonstrated that Rc is controllable by optimizing the contact area geometry.

KW - Amorphous oxide

KW - Contact area

KW - Contact resistance

KW - InGaZnO

KW - Specific contact resistivity

KW - Thin film transistor

KW - Transfer length

KW - Transmission line method

UR - http://www.scopus.com/inward/record.url?scp=84898813393&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2014.02.026

DO - 10.1016/j.tsf.2014.02.026

M3 - Article

AN - SCOPUS:84898813393

SN - 0040-6090

VL - 558

SP - 279

EP - 282

JO - Thin Solid Films

JF - Thin Solid Films

ER -

Effects of geometrically extended contact area on electrical properties in amorphous InGaZnO thin film transistors

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

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