Effects of hillocks and post-growth annealing on electrical properties in GaN grown by metalorganic chemical vapor deposition

Engineering & Materials Science

• Metallorganic chemical vapor deposition 100%
• Epilayers 72%
• Electric properties 67%
• Annealing 62%
• Buffer layers 60%
• Hall mobility 42%
• Surface morphology 23%
• Electrons 21%
• Impurities 20%
• Carbon 16%

Chemical Compounds

• Chemical Vapour Deposition 57%
• Electrical Property 53%
• Annealing 49%
• Buffer Solution 41%
• Deposition Technique 34%
• Compound Mobility 24%
• Electron Particle 17%
• Carbon Atom 14%
• Surface 10%

Physics & Astronomy

• metalorganic chemical vapor deposition 60%
• electrical properties 46%
• annealing 38%
• buffers 35%
• compensators 25%
• carbon 14%
• impurities 13%
• nuclei 13%
• electrons 8%