Effects of hydrogen plasma treatment condition on electrical properties of β-Ga2O3

A. Y. Polyakov, In Hwan Lee, N. B. Smirnov, E. B. Yakimov, I. V. Shchemerov, A. V. Chernykh, A. I. Kochkova, A. A. Vasilev, A. S. Shiko, Patrick H. Carey, F. Ren, S. J. Pearton

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8 Citations (Scopus)


The effects of hydrogen or deuterium plasma treatment at 330°C on electrical properties and deep trap spectra of n-type β-Ga2O3 films grown by halide vapor phase epitaxy on native n+ substrates are reported. Under plasma treatment conditions giving rise to higher energy ions (280 eV), hydrogen penetrates into the HVPE films and fully compensates or passivates shallow donors to ∼2 μm from the surface. The Fermi level in this high-resistivity layer is pinned by electron traps near Ec-1 eV (E3 traps) also present in the starting material. Annealing at 450°C shifts the pinning position to another dominant deep trap in the starting material, the E2 traps near Ec-0.75 eV. Subsequent annealing at 550°C almost fully restores the electrical properties. By sharp contrast, plasma treatment under conditions of low energy ions (35eV) severely reduced hydrogen incorporation and only slightly increased the near-surface donor concentration. The observed differences are discussed under the assumption that hydrogen is introduced in the form of isolated acceptor interstitials with the charge transfer level near Ec-0.5 eV in the first case, but as a donor with level inside the conduction band in the second case as proposed by recent theoretical calculations.

Original languageEnglish
Pages (from-to)P661-P666
JournalECS Journal of Solid State Science and Technology
Issue number11
Publication statusPublished - 2019

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© 2019 The Electrochemical Society.

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials


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