Effects of induced anisotropy on the bit stability and switching field in magnetic random access memory

K. S. Kim; K. H. Shin; S. H. Lim

doi:10.1016/j.jmmm.2006.07.014

Effects of induced anisotropy on the bit stability and switching field in magnetic random access memory

K. S. Kim, K. H. Shin, S. H. Lim

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

One of the features of the new spin-flop switching method with its wide writing window is to use a trilayer synthetic antiferromagnet (SyAF) with circular geometry as the free layer structure. For circular cells with zero in-plane shape anisotropy, the bi-stability of bits is achieved through the formation of induced anisotropy. Both the bi-stability and spin alignment become poor at a small induced anisotropy. On the other hand, a large induced anisotropy has an adverse effect of increasing the switching field. The switching field increase is more pronounced at higher antiferromagnetic exchange coupling of the trilayer SyAF. Our systematic investigations show that the suitable magnitude of induced anisotropy field is in the range 15-20 Oe.

Original language	English
Pages (from-to)	326-332
Number of pages	7
Journal	Journal of Magnetism and Magnetic Materials
Volume	309
Issue number	2
DOIs	https://doi.org/10.1016/j.jmmm.2006.07.014
Publication status	Published - 2007 Feb

Bibliographical note

Funding Information:
This work was supported by the Korean Ministry of Science and Technology through the National Research Laboratory program.

Keywords

Bit stability
Induced anisotropy
Magnetic random access memory
Spin-flop switching
Switching field

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1016/j.jmmm.2006.07.014

Cite this

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title = "Effects of induced anisotropy on the bit stability and switching field in magnetic random access memory",

abstract = "One of the features of the new spin-flop switching method with its wide writing window is to use a trilayer synthetic antiferromagnet (SyAF) with circular geometry as the free layer structure. For circular cells with zero in-plane shape anisotropy, the bi-stability of bits is achieved through the formation of induced anisotropy. Both the bi-stability and spin alignment become poor at a small induced anisotropy. On the other hand, a large induced anisotropy has an adverse effect of increasing the switching field. The switching field increase is more pronounced at higher antiferromagnetic exchange coupling of the trilayer SyAF. Our systematic investigations show that the suitable magnitude of induced anisotropy field is in the range 15-20 Oe.",

keywords = "Bit stability, Induced anisotropy, Magnetic random access memory, Spin-flop switching, Switching field",

author = "Kim, {K. S.} and Shin, {K. H.} and Lim, {S. H.}",

note = "Funding Information: This work was supported by the Korean Ministry of Science and Technology through the National Research Laboratory program. ",

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TY - JOUR

T1 - Effects of induced anisotropy on the bit stability and switching field in magnetic random access memory

AU - Kim, K. S.

AU - Shin, K. H.

AU - Lim, S. H.

N1 - Funding Information: This work was supported by the Korean Ministry of Science and Technology through the National Research Laboratory program.

PY - 2007/2

Y1 - 2007/2

N2 - One of the features of the new spin-flop switching method with its wide writing window is to use a trilayer synthetic antiferromagnet (SyAF) with circular geometry as the free layer structure. For circular cells with zero in-plane shape anisotropy, the bi-stability of bits is achieved through the formation of induced anisotropy. Both the bi-stability and spin alignment become poor at a small induced anisotropy. On the other hand, a large induced anisotropy has an adverse effect of increasing the switching field. The switching field increase is more pronounced at higher antiferromagnetic exchange coupling of the trilayer SyAF. Our systematic investigations show that the suitable magnitude of induced anisotropy field is in the range 15-20 Oe.

AB - One of the features of the new spin-flop switching method with its wide writing window is to use a trilayer synthetic antiferromagnet (SyAF) with circular geometry as the free layer structure. For circular cells with zero in-plane shape anisotropy, the bi-stability of bits is achieved through the formation of induced anisotropy. Both the bi-stability and spin alignment become poor at a small induced anisotropy. On the other hand, a large induced anisotropy has an adverse effect of increasing the switching field. The switching field increase is more pronounced at higher antiferromagnetic exchange coupling of the trilayer SyAF. Our systematic investigations show that the suitable magnitude of induced anisotropy field is in the range 15-20 Oe.

KW - Bit stability

KW - Induced anisotropy

KW - Magnetic random access memory

KW - Spin-flop switching

KW - Switching field

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DO - 10.1016/j.jmmm.2006.07.014

M3 - Article

AN - SCOPUS:33750532734

SN - 0304-8853

VL - 309

SP - 326

EP - 332

JO - Journal of Magnetism and Magnetic Materials

JF - Journal of Magnetism and Magnetic Materials

IS - 2

ER -

Effects of induced anisotropy on the bit stability and switching field in magnetic random access memory

Abstract

Bibliographical note

Keywords

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