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Effects of induced anisotropy on the bit stability and switching field in magnetic random access memory
K. S. Kim
, K. H. Shin
,
S. H. Lim
*
*
Corresponding author for this work
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peer-review
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Keyphrases
Switching Field
100%
Magnetic Random Access Memory
100%
Induced Anisotropy
100%
Stability Field
100%
Trilayer
40%
Bistability
40%
Synthetic Antiferromagnets
40%
Spin-flop
20%
Layered Structure
20%
Adverse Effects
20%
Free Layer
20%
Circular Cell
20%
Antiferromagnetic Exchange
20%
Switching Method
20%
Shape Anisotropy
20%
Spin Alignment
20%
Plane Shape
20%
Anisotropy Field
20%
Circular Geometry
20%
Engineering
Random Access Memory
100%
Layer Structure
100%
Free Layer
100%
Anisotropy Field
100%
Circular Geometry
100%
Physics
Anisotropy
100%
Exchange Coupling
16%