Effects of Interface States on Electrical Characteristics of Feedback Field-Effect Transistors

Juhee Jeon, Kyoungah Cho, Sangsig Kim

Research output: Contribution to journalArticlepeer-review


In this study, we examine the effect of interface trap states on the electrical characteristics of single-gated feedback field-effect transistors (FBFETs) using a commercially available computer-aided design simulation package. Interface trap states exist between the channels and the oxide layers, and these trap states act as acceptor-like trap states in regions of higher energy than the intrinsic Fermi energy ( Ei ) and as donor-like trap states in regions of lower energy than Ei in the energy band. The density distribution peaks at Ei + 0.28 eV for the acceptor-like trap states and at Ei - 0.28 eV for the donor-like trap states. The occupation mechanism of these trap states is analyzed by the density of the interface states and trapped charges, the energy band diagram, and the current-voltage curves. In n-channel (p-channel) FBFETs, the latch-up voltage varies by approximately 0.01 V as the acceptor-like (donor-like) trap states increase, whereas the effect of the donor-like (acceptor-like) trap states is negligible. Moreover, the FBFETs exhibit an operating speed of 4 ns and retention time of 900 s during a memory operation, despite the existence of the interface states.

Original languageEnglish
Pages (from-to)54692-54698
Number of pages7
JournalIEEE Access
Publication statusPublished - 2023

Bibliographical note

Funding Information:
This work was supported in part by the National Research Foundation of Korea (NRF) grant funded by the Ministry of Science and ICT (MSIT) under Grant 2020R1A2C3004538 and Grant 2022M3I7A3046571, and in part by the Brain Korea 21 Plus Project and Samsung Electronics under Grant IO201223-08257-01.

Publisher Copyright:
© 2013 IEEE.


  • interface state
  • memory
  • Positive feedback mechanism
  • trap

ASJC Scopus subject areas

  • General Computer Science
  • General Materials Science
  • General Engineering


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