Effects of laterally overgrown n-GaN thickness on defect and deep level concentrations

A. Y. Polyakov; N. B. Smirnov; A. V. Govorkov; A. V. Markov; E. B. Yakimov; P. S. Vergeles; In Hwan Lee; Cheul Ro Lee; S. J. Pearton

doi:10.1116/1.2919148

Effects of laterally overgrown n-GaN thickness on defect and deep level concentrations

A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, A. V. Markov, E. B. Yakimov, P. S. Vergeles, In Hwan Lee, Cheul Ro Lee, S. J. Pearton

Research output: Contribution to journal › Article › peer-review

43 Citations (Scopus)

Abstract

The effects of the layer thickness and of Si doping on the dislocation type and density, electron concentration, and deep trap spectra were studied for epitaxially laterally overgrown (ELOG) GaN films with the ELOG region thickness varying from 6 to 12 μm. Electron beam induced current imaging shows that for the thickest layers, the major part of the threading dislocations are filtered out while for thinner films they bend, but do not go out of play. The concentration of residual donors and major electron traps is found to decrease with increasing the film thickness. Si doping suppresses the concentration of the main electron trap with activation energy of 0.6 eV and enhances the concentration of the main hole trap at Ev +0.85 eV.

Original language	English
Pages (from-to)	990-994
Number of pages	5
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	26
Issue number	3
DOIs	https://doi.org/10.1116/1.2919148
Publication status	Published - 2008
Externally published	Yes

Bibliographical note

Funding Information:
The work at IRM was supported in part by a grant from Russian Foundation for Basic Research (RFBR Grant No. 05-02-08015) and ICTS (Grant No. 3029). The work at UF is partially supported by NSF DMR-070010.

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

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Polyakov, A. Y., Smirnov, N. B., Govorkov, A. V., Markov, A. V., Yakimov, E. B., Vergeles, P. S., Lee, I. H., Lee, C. R., & Pearton, S. J. (2008). Effects of laterally overgrown n-GaN thickness on defect and deep level concentrations. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 26(3), 990-994. https://doi.org/10.1116/1.2919148

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title = "Effects of laterally overgrown n-GaN thickness on defect and deep level concentrations",

abstract = "The effects of the layer thickness and of Si doping on the dislocation type and density, electron concentration, and deep trap spectra were studied for epitaxially laterally overgrown (ELOG) GaN films with the ELOG region thickness varying from 6 to 12 μm. Electron beam induced current imaging shows that for the thickest layers, the major part of the threading dislocations are filtered out while for thinner films they bend, but do not go out of play. The concentration of residual donors and major electron traps is found to decrease with increasing the film thickness. Si doping suppresses the concentration of the main electron trap with activation energy of 0.6 eV and enhances the concentration of the main hole trap at Ev +0.85 eV.",

author = "Polyakov, {A. Y.} and Smirnov, {N. B.} and Govorkov, {A. V.} and Markov, {A. V.} and Yakimov, {E. B.} and Vergeles, {P. S.} and Lee, {In Hwan} and Lee, {Cheul Ro} and Pearton, {S. J.}",

note = "Funding Information: The work at IRM was supported in part by a grant from Russian Foundation for Basic Research (RFBR Grant No. 05-02-08015) and ICTS (Grant No. 3029). The work at UF is partially supported by NSF DMR-070010. ",

year = "2008",

doi = "10.1116/1.2919148",

language = "English",

volume = "26",

pages = "990--994",

journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",

issn = "1071-1023",

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TY - JOUR

T1 - Effects of laterally overgrown n-GaN thickness on defect and deep level concentrations

AU - Polyakov, A. Y.

AU - Smirnov, N. B.

AU - Govorkov, A. V.

AU - Markov, A. V.

AU - Yakimov, E. B.

AU - Vergeles, P. S.

AU - Lee, In Hwan

AU - Lee, Cheul Ro

AU - Pearton, S. J.

N1 - Funding Information: The work at IRM was supported in part by a grant from Russian Foundation for Basic Research (RFBR Grant No. 05-02-08015) and ICTS (Grant No. 3029). The work at UF is partially supported by NSF DMR-070010.

PY - 2008

Y1 - 2008

N2 - The effects of the layer thickness and of Si doping on the dislocation type and density, electron concentration, and deep trap spectra were studied for epitaxially laterally overgrown (ELOG) GaN films with the ELOG region thickness varying from 6 to 12 μm. Electron beam induced current imaging shows that for the thickest layers, the major part of the threading dislocations are filtered out while for thinner films they bend, but do not go out of play. The concentration of residual donors and major electron traps is found to decrease with increasing the film thickness. Si doping suppresses the concentration of the main electron trap with activation energy of 0.6 eV and enhances the concentration of the main hole trap at Ev +0.85 eV.

AB - The effects of the layer thickness and of Si doping on the dislocation type and density, electron concentration, and deep trap spectra were studied for epitaxially laterally overgrown (ELOG) GaN films with the ELOG region thickness varying from 6 to 12 μm. Electron beam induced current imaging shows that for the thickest layers, the major part of the threading dislocations are filtered out while for thinner films they bend, but do not go out of play. The concentration of residual donors and major electron traps is found to decrease with increasing the film thickness. Si doping suppresses the concentration of the main electron trap with activation energy of 0.6 eV and enhances the concentration of the main hole trap at Ev +0.85 eV.

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U2 - 10.1116/1.2919148

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JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

IS - 3

ER -

Effects of laterally overgrown n-GaN thickness on defect and deep level concentrations

Abstract

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