Effects of laterally overgrown n-GaN thickness on defect and deep level concentrations

Keyphrases

• N-GaN 100%
• Electron Traps 100%
• Si Doping 100%
• Activation Energy 50%
• Layer Thickness 50%
• Electron Concentration 50%
• GaN Films 50%
• Film Thickness 50%
• Deep Traps 50%
• Dislocation Density 50%
• Threading Dislocation 50%
• Current Imaging 50%
• Thick Layer 50%
• Hole Trapping 50%
• Electron Beam Induced Current 50%
• Dislocation Type 50%

Engineering

• Deep Level 100%
• Electron Trap 100%
• Thin Films 50%
• Layer Thickness 50%
• Electron Concentration 50%
• Activation Energy 50%
• Major Part 50%
• Threading Dislocation 50%
• Thick Layer 50%