Effects of material growth technique and Mg doping on Er3+ photoluminescence in Er-implanted GaN

S. Kim, R. L. Henry, A. E. Wickenden, D. D. Koleske, S. J. Rhee, J. O. White, J. M. Myoung, K. Kim, X. Li, J. J. Coleman, S. G. Bishop

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13 Citations (Scopus)


Photoluminescence (PL) and photoluminescence excitation (PLE) spectroscopies have been carried out at 6 K on the ∼1540 nm 4I13/2-4I15/2 emissions of Er3+ in Er-implanted and annealed GaN. These studies revealed the existence of multiple Er3+ centers and associated PL spectra in Er-implanted GaN films grown by metalorganic chemical vapor deposition, hydride vapor phase epitaxy, and molecular beam epitaxy. The results demonstrate that the multiple Er3+PL centers and below-gap defect-related absorption bands by which they are selectively excited are universal features of Er-implanted GaN grown by different techniques. It is suggested that implantation-induced defects common to all the GaN samples are responsible for the Er site distortions that give rise to the distinctive, selectively excited Er3+PL spectra. The investigations of selectively excited Er3+PL and PLE spectra have also been extended to Er-implanted samples of Mg-doped GaN grown by various techniques. In each of these samples, the so-called violet-pumped Er3+PL band and its associated broad violet PLE band are significantly enhanced relative to the PL and PLE of the other selectively excited Er3+PL centers. More importantly, the violet-pumped Er3+PL spectrum dominates the above-gap excited Er3+PL spectrum of Er-implanted Mg-doped GaN, whereas it was unobservable under above-gap excitation in Er-implanted undoped GaN. These results confirm the hypothesis that appropriate codopants can increase the efficiency of trap-mediated above-gap excitation of Er3+ emission in Er-implanted GaN.

Original languageEnglish
Pages (from-to)252-259
Number of pages8
JournalJournal of Applied Physics
Issue number1
Publication statusPublished - 2001 Jul

ASJC Scopus subject areas

  • Physics and Astronomy(all)


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