Effects of Nb2O5 and SiO2 buffer layers on the suppression of potassium out-diffusion into indium tin oxide electrode formed on chemically strengthened glass

Chan Hwa Hong; Jae Heon Shin; Nae Man Park; Kyung Hyun Kim; Bo Sul Kim; Joon Seop Kwak; Byeong Kwon Ju; Woo Seok Cheong

doi:10.7567/JJAP.53.08NG01

Effects of Nb₂O₅ and SiO₂ buffer layers on the suppression of potassium out-diffusion into indium tin oxide electrode formed on chemically strengthened glass

Chan Hwa Hong, Jae Heon Shin, Nae Man Park, Kyung Hyun Kim, Bo Sul Kim, Joon Seop Kwak, Byeong Kwon Ju, Woo Seok Cheong

School of Electrical Engineering

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Abstract

We have investigated the electrical properties of indium tin oxide (ITO) thin films deposited on chemically strengthened glass (CSG) substrate by room-temperature ionized physical vapor deposition (IPVD). The ITO thin film on the CSG substrate shows a higher sheet resistance after hightemperature anneal process (>200 °C) possibly due to the out-diffusion of potassium ions (K⁺) from the CSG. We have improved the electrical properties of the ITO thin film by inserting Nb₂O₅/SiO₂ buffer layers between the ITO layer and the CSG substrate. As a result, a protected and index-matched 30-nm-thick ITO thin film with sheet resistance less than 120O/sq and optical transmittance higher than 90% (at 550 nm) has been achieved.

Original language	English
Article number	08NG01
Journal	Japanese journal of applied physics
Volume	53
Issue number	8 SPEC. ISSUE 3
DOIs	https://doi.org/10.7567/JJAP.53.08NG01
Publication status	Published - 2014 Aug

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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Hong, C. H., Shin, J. H., Park, N. M., Kim, K. H., Kim, B. S., Kwak, J. S., Ju, B. K., & Cheong, W. S. (2014). Effects of Nb₂O₅ and SiO₂ buffer layers on the suppression of potassium out-diffusion into indium tin oxide electrode formed on chemically strengthened glass. Japanese journal of applied physics, 53(8 SPEC. ISSUE 3), [08NG01]. https://doi.org/10.7567/JJAP.53.08NG01

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title = "Effects of Nb2O5 and SiO2 buffer layers on the suppression of potassium out-diffusion into indium tin oxide electrode formed on chemically strengthened glass",

abstract = "We have investigated the electrical properties of indium tin oxide (ITO) thin films deposited on chemically strengthened glass (CSG) substrate by room-temperature ionized physical vapor deposition (IPVD). The ITO thin film on the CSG substrate shows a higher sheet resistance after hightemperature anneal process (>200 °C) possibly due to the out-diffusion of potassium ions (K+) from the CSG. We have improved the electrical properties of the ITO thin film by inserting Nb2O5/SiO2 buffer layers between the ITO layer and the CSG substrate. As a result, a protected and index-matched 30-nm-thick ITO thin film with sheet resistance less than 120O/sq and optical transmittance higher than 90% (at 550 nm) has been achieved.",

author = "Hong, {Chan Hwa} and Shin, {Jae Heon} and Park, {Nae Man} and Kim, {Kyung Hyun} and Kim, {Bo Sul} and Kwak, {Joon Seop} and Ju, {Byeong Kwon} and Cheong, {Woo Seok}",

year = "2014",

month = aug,

doi = "10.7567/JJAP.53.08NG01",

language = "English",

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T1 - Effects of Nb2O5 and SiO2 buffer layers on the suppression of potassium out-diffusion into indium tin oxide electrode formed on chemically strengthened glass

AU - Hong, Chan Hwa

AU - Shin, Jae Heon

AU - Park, Nae Man

AU - Kim, Kyung Hyun

AU - Kim, Bo Sul

AU - Kwak, Joon Seop

AU - Ju, Byeong Kwon

AU - Cheong, Woo Seok

PY - 2014/8

Y1 - 2014/8

N2 - We have investigated the electrical properties of indium tin oxide (ITO) thin films deposited on chemically strengthened glass (CSG) substrate by room-temperature ionized physical vapor deposition (IPVD). The ITO thin film on the CSG substrate shows a higher sheet resistance after hightemperature anneal process (>200 °C) possibly due to the out-diffusion of potassium ions (K+) from the CSG. We have improved the electrical properties of the ITO thin film by inserting Nb2O5/SiO2 buffer layers between the ITO layer and the CSG substrate. As a result, a protected and index-matched 30-nm-thick ITO thin film with sheet resistance less than 120O/sq and optical transmittance higher than 90% (at 550 nm) has been achieved.

AB - We have investigated the electrical properties of indium tin oxide (ITO) thin films deposited on chemically strengthened glass (CSG) substrate by room-temperature ionized physical vapor deposition (IPVD). The ITO thin film on the CSG substrate shows a higher sheet resistance after hightemperature anneal process (>200 °C) possibly due to the out-diffusion of potassium ions (K+) from the CSG. We have improved the electrical properties of the ITO thin film by inserting Nb2O5/SiO2 buffer layers between the ITO layer and the CSG substrate. As a result, a protected and index-matched 30-nm-thick ITO thin film with sheet resistance less than 120O/sq and optical transmittance higher than 90% (at 550 nm) has been achieved.

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JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

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M1 - 08NG01

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Effects of Nb₂O₅ and SiO₂ buffer layers on the suppression of potassium out-diffusion into indium tin oxide electrode formed on chemically strengthened glass

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