Effects of oxygen incorporation in GeSbTe films on electrical properties and thermal stability

Moon Hyung Jang; Seung Jong Park; Dong Hyeok Lim; Sung Jin Park; Mann Ho Cho; Seong Jin Cho; Yoon Ho Cho; Jong Heun Lee

doi:10.1063/1.3353973

Effects of oxygen incorporation in GeSbTe films on electrical properties and thermal stability

Moon Hyung Jang, Seung Jong Park, Dong Hyeok Lim, Sung Jin Park, Mann Ho Cho, Seong Jin Cho, Yoon Ho Cho, Jong Heun Lee

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

Oxygen incorporated Ge₂Sb₂Te₅ (GST) films were prepared by an ion beam sputtering deposition method. I-V curves of the oxygen incorporated GST active layer showed that the threshold voltage (Vth) varied, depending on the level of incorporated oxygen. In the case of a GST film with an elevated oxygen content of 30.8%, the GST layer melted at 9.02 V due to the instability conferred by the high oxygen content. The formation of Ge-deficient hexagonal phases such as GeSb₂Te₄ and Sb ₂Te₃ appear to be responsible for the Vth variation. Impedance analyses indicated that the resistance in GST films with oxygen contents of 16.7% and 21.7% had different origins. Thermal desorption spectroscopy data indicate that moisture and hydrocarbons were more readily desorbed at higher oxygen content because the oxygen incorporated GST films are more hydrophilic than undoped GST films.

Original language	English
Article number	092108
Journal	Applied Physics Letters
Volume	96
Issue number	9
DOIs	https://doi.org/10.1063/1.3353973
Publication status	Published - 2010

Bibliographical note

Funding Information:
This research was supported by the National Research Project for “Phase-Change Random Access Memory Development” sponsored by the Ministry of Knowledge Economy (MKE) of Korea.

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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@article{dec02175cd0b40aaa864ae7ee35df5a8,

title = "Effects of oxygen incorporation in GeSbTe films on electrical properties and thermal stability",

abstract = "Oxygen incorporated Ge2Sb2Te5 (GST) films were prepared by an ion beam sputtering deposition method. I-V curves of the oxygen incorporated GST active layer showed that the threshold voltage (Vth) varied, depending on the level of incorporated oxygen. In the case of a GST film with an elevated oxygen content of 30.8%, the GST layer melted at 9.02 V due to the instability conferred by the high oxygen content. The formation of Ge-deficient hexagonal phases such as GeSb2Te4 and Sb 2Te3 appear to be responsible for the Vth variation. Impedance analyses indicated that the resistance in GST films with oxygen contents of 16.7% and 21.7% had different origins. Thermal desorption spectroscopy data indicate that moisture and hydrocarbons were more readily desorbed at higher oxygen content because the oxygen incorporated GST films are more hydrophilic than undoped GST films.",

author = "Jang, {Moon Hyung} and Park, {Seung Jong} and Lim, {Dong Hyeok} and Park, {Sung Jin} and Cho, {Mann Ho} and Cho, {Seong Jin} and Cho, {Yoon Ho} and Lee, {Jong Heun}",

note = "Funding Information: This research was supported by the National Research Project for “Phase-Change Random Access Memory Development” sponsored by the Ministry of Knowledge Economy (MKE) of Korea. ",

year = "2010",

doi = "10.1063/1.3353973",

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AU - Jang, Moon Hyung

AU - Park, Seung Jong

AU - Lim, Dong Hyeok

AU - Park, Sung Jin

AU - Cho, Mann Ho

AU - Cho, Seong Jin

AU - Cho, Yoon Ho

AU - Lee, Jong Heun

N1 - Funding Information: This research was supported by the National Research Project for “Phase-Change Random Access Memory Development” sponsored by the Ministry of Knowledge Economy (MKE) of Korea.

PY - 2010

Y1 - 2010

N2 - Oxygen incorporated Ge2Sb2Te5 (GST) films were prepared by an ion beam sputtering deposition method. I-V curves of the oxygen incorporated GST active layer showed that the threshold voltage (Vth) varied, depending on the level of incorporated oxygen. In the case of a GST film with an elevated oxygen content of 30.8%, the GST layer melted at 9.02 V due to the instability conferred by the high oxygen content. The formation of Ge-deficient hexagonal phases such as GeSb2Te4 and Sb 2Te3 appear to be responsible for the Vth variation. Impedance analyses indicated that the resistance in GST films with oxygen contents of 16.7% and 21.7% had different origins. Thermal desorption spectroscopy data indicate that moisture and hydrocarbons were more readily desorbed at higher oxygen content because the oxygen incorporated GST films are more hydrophilic than undoped GST films.

AB - Oxygen incorporated Ge2Sb2Te5 (GST) films were prepared by an ion beam sputtering deposition method. I-V curves of the oxygen incorporated GST active layer showed that the threshold voltage (Vth) varied, depending on the level of incorporated oxygen. In the case of a GST film with an elevated oxygen content of 30.8%, the GST layer melted at 9.02 V due to the instability conferred by the high oxygen content. The formation of Ge-deficient hexagonal phases such as GeSb2Te4 and Sb 2Te3 appear to be responsible for the Vth variation. Impedance analyses indicated that the resistance in GST films with oxygen contents of 16.7% and 21.7% had different origins. Thermal desorption spectroscopy data indicate that moisture and hydrocarbons were more readily desorbed at higher oxygen content because the oxygen incorporated GST films are more hydrophilic than undoped GST films.

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Effects of oxygen incorporation in GeSbTe films on electrical properties and thermal stability

Abstract

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