Effects of oxygen-plasma treatment on lanthanum-substituted bismuth titanate ferroelectric thin films

E. R. Park; Cheol Eui Lee; S. J. Yeom

doi:10.1016/j.tsf.2005.09.146

Effects of oxygen-plasma treatment on lanthanum-substituted bismuth titanate ferroelectric thin films

E. R. Park, Cheol Eui Lee, S. J. Yeom

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

Oxygen-plasma treatment has been done on Bi_3.25La _0.85Ti₃O₁₂ (BLT) films for lower crystallization temperatures and improved ferroelectric properties. The films, prepared by metal organic decomposition method on Pt and IrO₂ electrodes sputtered on Al₂O₃/SiO₂/Si substrates, were pre-annealed at the relatively low temperatures of 550 and 600 °C, followed by room temperature microwave oxygen-plasma treatment. The oxygen-plasma-treated BLT films showed very good ferroelectric characteristics after a final furnace annealing at 600 °C.

Original language	English
Pages (from-to)	185-188
Number of pages	4
Journal	Thin Solid Films
Volume	497
Issue number	1-2
DOIs	https://doi.org/10.1016/j.tsf.2005.09.146
Publication status	Published - 2006 Feb 21

Keywords

Ferroelectric properties
Plasma processing and deposition

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1016/j.tsf.2005.09.146

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title = "Effects of oxygen-plasma treatment on lanthanum-substituted bismuth titanate ferroelectric thin films",

abstract = "Oxygen-plasma treatment has been done on Bi3.25La 0.85Ti3O12 (BLT) films for lower crystallization temperatures and improved ferroelectric properties. The films, prepared by metal organic decomposition method on Pt and IrO2 electrodes sputtered on Al2O3/SiO2/Si substrates, were pre-annealed at the relatively low temperatures of 550 and 600 °C, followed by room temperature microwave oxygen-plasma treatment. The oxygen-plasma-treated BLT films showed very good ferroelectric characteristics after a final furnace annealing at 600 °C.",

keywords = "Ferroelectric properties, Plasma processing and deposition",

author = "Park, {E. R.} and Lee, {Cheol Eui} and Yeom, {S. J.}",

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AU - Park, E. R.

AU - Lee, Cheol Eui

AU - Yeom, S. J.

PY - 2006/2/21

Y1 - 2006/2/21

N2 - Oxygen-plasma treatment has been done on Bi3.25La 0.85Ti3O12 (BLT) films for lower crystallization temperatures and improved ferroelectric properties. The films, prepared by metal organic decomposition method on Pt and IrO2 electrodes sputtered on Al2O3/SiO2/Si substrates, were pre-annealed at the relatively low temperatures of 550 and 600 °C, followed by room temperature microwave oxygen-plasma treatment. The oxygen-plasma-treated BLT films showed very good ferroelectric characteristics after a final furnace annealing at 600 °C.

AB - Oxygen-plasma treatment has been done on Bi3.25La 0.85Ti3O12 (BLT) films for lower crystallization temperatures and improved ferroelectric properties. The films, prepared by metal organic decomposition method on Pt and IrO2 electrodes sputtered on Al2O3/SiO2/Si substrates, were pre-annealed at the relatively low temperatures of 550 and 600 °C, followed by room temperature microwave oxygen-plasma treatment. The oxygen-plasma-treated BLT films showed very good ferroelectric characteristics after a final furnace annealing at 600 °C.

KW - Ferroelectric properties

KW - Plasma processing and deposition

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DO - 10.1016/j.tsf.2005.09.146

M3 - Article

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SN - 0040-6090

VL - 497

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EP - 188

JO - Thin Solid Films

JF - Thin Solid Films

IS - 1-2

ER -

Effects of oxygen-plasma treatment on lanthanum-substituted bismuth titanate ferroelectric thin films

Abstract

Keywords

ASJC Scopus subject areas

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