Effects of oxygen pressure on characteristics of 0.05Pb(Al 0.5Nb0.5)O3-0.95Pb(Zr0.52Ti 0.48)O3thin films grown on alumina substrates by pulsed laser deposition

Min Gyu Kang; Kwang Hwan Cho; Woo Suk Jung; Bong Hee Cho; Chong Yun Kang; Sahn Nahm; Seok Jin Yoon

doi:10.1016/j.sna.2012.09.008

Effects of oxygen pressure on characteristics of 0.05Pb(Al _0.5Nb_0.5)O₃-0.95Pb(Zr_0.52Ti _0.48)O₃thin films grown on alumina substrates by pulsed laser deposition

Min Gyu Kang, Kwang Hwan Cho, Woo Suk Jung, Bong Hee Cho, Chong Yun Kang, Sahn Nahm, Seok Jin Yoon

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

Binary system of 0.05Pb(Al_0.5Nb_0.5)O ₃-0.95Pb(Zr_0.52Ti_0.48)O₃(PAN-PZT) thin films were deposited on alumina substrates by a pulsed laser deposition method and we investigated effects of oxygen pressure on ferroelectric domain structure and the piezoelectric characteristics of the films by piezoelectric force microscope (PFM). The films in optimum oxygen pressure exhibited the remnant polarization of 58.4 and 24.4 μC/cm², and 180° and 90° domain switching behavior were observed from PFM analysis. We obtained a large effective piezoelectric constant (d₃₃) value (∼110 pm/V) in the films. As a result, we can determine the ferroelectric domain structure and improve the piezoelectric properties of the PAN-PZT films using an oxygen pressure control during the process and it helps to obtain suitable piezoelectric thin films for sensors and actuators applications.

Original language	English
Pages (from-to)	68-73
Number of pages	6
Journal	Sensors and Actuators, A: Physical
Volume	200
DOIs	https://doi.org/10.1016/j.sna.2012.09.008
Publication status	Published - 2013

Keywords

Alumina substrate
Oxygen pressure
Piezoelectric
Pulsed laser deposition
Thin film

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Instrumentation
Condensed Matter Physics
Surfaces, Coatings and Films
Metals and Alloys
Electrical and Electronic Engineering

Access to Document

10.1016/j.sna.2012.09.008

Cite this

@article{7754c495577b43609a79946a6dbfe421,

title = "Effects of oxygen pressure on characteristics of 0.05Pb(Al 0.5Nb0.5)O3-0.95Pb(Zr0.52Ti 0.48)O3thin films grown on alumina substrates by pulsed laser deposition",

abstract = "Binary system of 0.05Pb(Al0.5Nb0.5)O 3-0.95Pb(Zr0.52Ti0.48)O3(PAN-PZT) thin films were deposited on alumina substrates by a pulsed laser deposition method and we investigated effects of oxygen pressure on ferroelectric domain structure and the piezoelectric characteristics of the films by piezoelectric force microscope (PFM). The films in optimum oxygen pressure exhibited the remnant polarization of 58.4 and 24.4 μC/cm2, and 180° and 90° domain switching behavior were observed from PFM analysis. We obtained a large effective piezoelectric constant (d33) value (∼110 pm/V) in the films. As a result, we can determine the ferroelectric domain structure and improve the piezoelectric properties of the PAN-PZT films using an oxygen pressure control during the process and it helps to obtain suitable piezoelectric thin films for sensors and actuators applications.",

keywords = "Alumina substrate, Oxygen pressure, Piezoelectric, Pulsed laser deposition, Thin film",

author = "Kang, {Min Gyu} and Cho, {Kwang Hwan} and Jung, {Woo Suk} and Cho, {Bong Hee} and Kang, {Chong Yun} and Sahn Nahm and Yoon, {Seok Jin}",

year = "2013",

doi = "10.1016/j.sna.2012.09.008",

language = "English",

volume = "200",

pages = "68--73",

journal = "Sensors and Actuators, A: Physical",

issn = "0924-4247",

publisher = "Elsevier",

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T1 - Effects of oxygen pressure on characteristics of 0.05Pb(Al 0.5Nb0.5)O3-0.95Pb(Zr0.52Ti 0.48)O3thin films grown on alumina substrates by pulsed laser deposition

AU - Kang, Min Gyu

AU - Cho, Kwang Hwan

AU - Jung, Woo Suk

AU - Cho, Bong Hee

AU - Kang, Chong Yun

AU - Nahm, Sahn

AU - Yoon, Seok Jin

PY - 2013

Y1 - 2013

N2 - Binary system of 0.05Pb(Al0.5Nb0.5)O 3-0.95Pb(Zr0.52Ti0.48)O3(PAN-PZT) thin films were deposited on alumina substrates by a pulsed laser deposition method and we investigated effects of oxygen pressure on ferroelectric domain structure and the piezoelectric characteristics of the films by piezoelectric force microscope (PFM). The films in optimum oxygen pressure exhibited the remnant polarization of 58.4 and 24.4 μC/cm2, and 180° and 90° domain switching behavior were observed from PFM analysis. We obtained a large effective piezoelectric constant (d33) value (∼110 pm/V) in the films. As a result, we can determine the ferroelectric domain structure and improve the piezoelectric properties of the PAN-PZT films using an oxygen pressure control during the process and it helps to obtain suitable piezoelectric thin films for sensors and actuators applications.

AB - Binary system of 0.05Pb(Al0.5Nb0.5)O 3-0.95Pb(Zr0.52Ti0.48)O3(PAN-PZT) thin films were deposited on alumina substrates by a pulsed laser deposition method and we investigated effects of oxygen pressure on ferroelectric domain structure and the piezoelectric characteristics of the films by piezoelectric force microscope (PFM). The films in optimum oxygen pressure exhibited the remnant polarization of 58.4 and 24.4 μC/cm2, and 180° and 90° domain switching behavior were observed from PFM analysis. We obtained a large effective piezoelectric constant (d33) value (∼110 pm/V) in the films. As a result, we can determine the ferroelectric domain structure and improve the piezoelectric properties of the PAN-PZT films using an oxygen pressure control during the process and it helps to obtain suitable piezoelectric thin films for sensors and actuators applications.

KW - Alumina substrate

KW - Oxygen pressure

KW - Piezoelectric

KW - Pulsed laser deposition

KW - Thin film

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