Effects of oxygen pressure on electrical properties of (Na 0.5K 0.5)NbO 3 films grown on Pt/Ti/SiO 2/Si substrates

Bo Yun Kim; Tae Geun Seong; In Tae Seo; Jin Seong Kim; Chong Yun Kang; Seok Jin Yoon; Sahn Nahm

doi:10.1016/j.actamat.2012.09.010

Effects of oxygen pressure on electrical properties of (Na _0.5K _0.5)NbO ₃ films grown on Pt/Ti/SiO ₂/Si substrates

Bo Yun Kim, Tae Geun Seong, In Tae Seo, Jin Seong Kim, Chong Yun Kang, Seok Jin Yoon, Sahn Nahm

Research output: Contribution to journal › Article › peer-review

18 Citations (Scopus)

Abstract

(Na _0.5K _0.5)NbO ₃ (NKN) films were annealed under various oxygen partial pressures (OPPs), and the effect of the OPP on the electrical properties of the NKN films was investigated. The dielectric and piezoelectric constants of the NKN film were not influenced by the OPP. However, the remnant polarization and coercive field decreased when the OPP exceeded 25.0 torr because of the low breakdown field and high leakage current. The NKN film annealed under air atmosphere exhibited a high leakage current density that decreased with increasing OPP because of the decreased number of oxygen vacancies. The minimum leakage current density of 3.7 × 10 ^-8 A cm ^-2 at 0.3 MV cm ^-1 was obtained for the NKN film annealed under an OPP of 25.0 torr. The leakage current increased when the OPP exceeded 25.0 torr because of the formation of oxygen interstitial ions. The leakage current of the Pt/NKN/Pt device was explained by Schottky emission. The obtained Schottky barrier height between the Pt electrode and NKN film was ∼1.24 eV.

Original language	English
Pages (from-to)	7034-7040
Number of pages	7
Journal	Acta Materialia
Volume	60
Issue number	20
DOIs	https://doi.org/10.1016/j.actamat.2012.09.010
Publication status	Published - 2012 Dec

Keywords

Electrical property
Leakage current mechanism
NKN thin film
Oxygen partial pressure
Oxygen vacancy

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Ceramics and Composites
Polymers and Plastics
Metals and Alloys

Access to Document

10.1016/j.actamat.2012.09.010

Cite this

@article{3f2fe26055ef45f99427a65a68fcc789,

title = "Effects of oxygen pressure on electrical properties of (Na 0.5K 0.5)NbO 3 films grown on Pt/Ti/SiO 2/Si substrates",

abstract = "(Na 0.5K 0.5)NbO 3 (NKN) films were annealed under various oxygen partial pressures (OPPs), and the effect of the OPP on the electrical properties of the NKN films was investigated. The dielectric and piezoelectric constants of the NKN film were not influenced by the OPP. However, the remnant polarization and coercive field decreased when the OPP exceeded 25.0 torr because of the low breakdown field and high leakage current. The NKN film annealed under air atmosphere exhibited a high leakage current density that decreased with increasing OPP because of the decreased number of oxygen vacancies. The minimum leakage current density of 3.7 × 10 -8 A cm -2 at 0.3 MV cm -1 was obtained for the NKN film annealed under an OPP of 25.0 torr. The leakage current increased when the OPP exceeded 25.0 torr because of the formation of oxygen interstitial ions. The leakage current of the Pt/NKN/Pt device was explained by Schottky emission. The obtained Schottky barrier height between the Pt electrode and NKN film was ∼1.24 eV.",

keywords = "Electrical property, Leakage current mechanism, NKN thin film, Oxygen partial pressure, Oxygen vacancy",

author = "Kim, {Bo Yun} and Seong, {Tae Geun} and Seo, {In Tae} and Kim, {Jin Seong} and Kang, {Chong Yun} and Yoon, {Seok Jin} and Sahn Nahm",

note = "Funding Information: This research was supported by the Fusion Research Program for Green Technologies through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology.",

year = "2012",

month = dec,

doi = "10.1016/j.actamat.2012.09.010",

language = "English",

volume = "60",

pages = "7034--7040",

journal = "Acta Materialia",

issn = "1359-6454",

publisher = "Elsevier Limited",

number = "20",

}

TY - JOUR

T1 - Effects of oxygen pressure on electrical properties of (Na 0.5K 0.5)NbO 3 films grown on Pt/Ti/SiO 2/Si substrates

AU - Kim, Bo Yun

AU - Seong, Tae Geun

AU - Seo, In Tae

AU - Kim, Jin Seong

AU - Kang, Chong Yun

AU - Yoon, Seok Jin

AU - Nahm, Sahn

N1 - Funding Information: This research was supported by the Fusion Research Program for Green Technologies through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology.

PY - 2012/12

Y1 - 2012/12

N2 - (Na 0.5K 0.5)NbO 3 (NKN) films were annealed under various oxygen partial pressures (OPPs), and the effect of the OPP on the electrical properties of the NKN films was investigated. The dielectric and piezoelectric constants of the NKN film were not influenced by the OPP. However, the remnant polarization and coercive field decreased when the OPP exceeded 25.0 torr because of the low breakdown field and high leakage current. The NKN film annealed under air atmosphere exhibited a high leakage current density that decreased with increasing OPP because of the decreased number of oxygen vacancies. The minimum leakage current density of 3.7 × 10 -8 A cm -2 at 0.3 MV cm -1 was obtained for the NKN film annealed under an OPP of 25.0 torr. The leakage current increased when the OPP exceeded 25.0 torr because of the formation of oxygen interstitial ions. The leakage current of the Pt/NKN/Pt device was explained by Schottky emission. The obtained Schottky barrier height between the Pt electrode and NKN film was ∼1.24 eV.

AB - (Na 0.5K 0.5)NbO 3 (NKN) films were annealed under various oxygen partial pressures (OPPs), and the effect of the OPP on the electrical properties of the NKN films was investigated. The dielectric and piezoelectric constants of the NKN film were not influenced by the OPP. However, the remnant polarization and coercive field decreased when the OPP exceeded 25.0 torr because of the low breakdown field and high leakage current. The NKN film annealed under air atmosphere exhibited a high leakage current density that decreased with increasing OPP because of the decreased number of oxygen vacancies. The minimum leakage current density of 3.7 × 10 -8 A cm -2 at 0.3 MV cm -1 was obtained for the NKN film annealed under an OPP of 25.0 torr. The leakage current increased when the OPP exceeded 25.0 torr because of the formation of oxygen interstitial ions. The leakage current of the Pt/NKN/Pt device was explained by Schottky emission. The obtained Schottky barrier height between the Pt electrode and NKN film was ∼1.24 eV.

KW - Electrical property

KW - Leakage current mechanism

KW - NKN thin film

KW - Oxygen partial pressure

KW - Oxygen vacancy

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U2 - 10.1016/j.actamat.2012.09.010

DO - 10.1016/j.actamat.2012.09.010

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