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Effects of oxygen pressure on electrical properties of (Na
0.5
K
0.5
)NbO
3
films grown on Pt/Ti/SiO
2
/Si substrates
Bo Yun Kim
, Tae Geun Seong
, In Tae Seo
, Jin Seong Kim
, Chong Yun Kang
, Seok Jin Yoon
,
Sahn Nahm
*
*
Corresponding author for this work
Research output
:
Contribution to journal
›
Article
›
peer-review
19
Citations (Scopus)
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Dive into the research topics of 'Effects of oxygen pressure on electrical properties of (Na
0.5
K
0.5
)NbO
3
films grown on Pt/Ti/SiO
2
/Si substrates'. Together they form a unique fingerprint.
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Keyphrases
Air Atmosphere
14%
Annealing
42%
Breakdown Field
14%
Coercive Field
14%
Dielectric Constant
14%
Electrical Properties
100%
Interstitial Ion
14%
Leakage Current
42%
Leakage Current Density
28%
Oxygen Effect
100%
Oxygen Interstitials
14%
Oxygen Partial Pressure
100%
Oxygen Pressure
100%
Oxygen Vacancy
14%
Piezoelectric Constant
14%
Polarization Field
14%
Pt Electrode
14%
Remnant Polarization
14%
Schottky Barrier Height
14%
Schottky Emission
14%
Si Substrate
100%
TiO2-SiO2
100%
Under Air
14%
Material Science
Density
28%
Dielectric Material
14%
Film
100%
Oxygen Vacancy
14%
Piezoelectricity
14%
Schottky Barrier
14%