TY - JOUR
T1 - Effects of Pd(P) thickness on the microstructural evolution between Sn-3Ag-0.5Cu and Ni(P)/Pd(P)/Au surface finish during the reflow process
AU - Chung, Bo Mook
AU - Baek, Yong Ho
AU - Choi, Jaeho
AU - Huh, Joo Youl
N1 - Funding Information:
The authors gratefully acknowledge the technical support of KPM Tech during the course of this study. This work was supported by a National Research Foundation of Korea (NRF) Grant (No. 2010-0014480) and Human Resources Development of the Korea Institute of Energy Technology Evaluation and Planning (KETEP) Grant (No. 20104010100640) funded by MEST and MKE, respectively, of the Korea Government.
PY - 2012/12
Y1 - 2012/12
N2 - The microstructural evolution between Sn-3Ag-0.5Cu (SAC305) solder and Ni(P)/Pd(P)/Au finish during the reflow process was investigated for various Pd(P) thicknesses (0 μm to 0.6 μm). The reflow process was carried out in a belt-conveying reflow oven with peak temperature of 260°C. In the early stages of the reflow process, the Pd(P) layer either dissolved or spalled in the form of (Pd,Ni)Sn4 into the molten solder, leaving behind an Ni 2SnP/Ni3P bilayer on the Ni(P) layer. From the dissolution of the spalled (Pd,Ni)Sn4 particles during the reflow process, the solubility of Pd in the molten SAC305 solder in the reflow process was estimated to be 0.18 wt.% to 0.25 wt.%. Regardless of the ratio of solder volume to pad opening size, the Ni2SnP layer that formed in the early stage of reflow had a significant influence on the subsequent formation and growth of (Cu,Ni)6Sn5 at the solder interface. As the Ni 2SnP layer became thicker with increasing Pd(P) thickness, the formation of (Cu,Ni)6Sn5 became increasingly sluggish and occurred only at locations where the Ni2SnP layer was locally thin or discontinuous, leading to a discontinuous morphology of (Cu,Ni) 6Sn5. This was attributed to the Ni2SnP layer that became an increasingly effective barrier to Ni diffusion with increasing thickness. Based on the experimental results, this study suggests detailed mechanisms underlying the effects of the Pd(P) thickness on the morphology and growth of the (Cu,Ni)6Sn5 formed during the reflow process.
AB - The microstructural evolution between Sn-3Ag-0.5Cu (SAC305) solder and Ni(P)/Pd(P)/Au finish during the reflow process was investigated for various Pd(P) thicknesses (0 μm to 0.6 μm). The reflow process was carried out in a belt-conveying reflow oven with peak temperature of 260°C. In the early stages of the reflow process, the Pd(P) layer either dissolved or spalled in the form of (Pd,Ni)Sn4 into the molten solder, leaving behind an Ni 2SnP/Ni3P bilayer on the Ni(P) layer. From the dissolution of the spalled (Pd,Ni)Sn4 particles during the reflow process, the solubility of Pd in the molten SAC305 solder in the reflow process was estimated to be 0.18 wt.% to 0.25 wt.%. Regardless of the ratio of solder volume to pad opening size, the Ni2SnP layer that formed in the early stage of reflow had a significant influence on the subsequent formation and growth of (Cu,Ni)6Sn5 at the solder interface. As the Ni 2SnP layer became thicker with increasing Pd(P) thickness, the formation of (Cu,Ni)6Sn5 became increasingly sluggish and occurred only at locations where the Ni2SnP layer was locally thin or discontinuous, leading to a discontinuous morphology of (Cu,Ni) 6Sn5. This was attributed to the Ni2SnP layer that became an increasingly effective barrier to Ni diffusion with increasing thickness. Based on the experimental results, this study suggests detailed mechanisms underlying the effects of the Pd(P) thickness on the morphology and growth of the (Cu,Ni)6Sn5 formed during the reflow process.
KW - Diffusion barrier
KW - ENEPIG surface finish
KW - Interfacial reaction
KW - NiSnP
KW - Sn-Ag-Cu
UR - http://www.scopus.com/inward/record.url?scp=84869508232&partnerID=8YFLogxK
U2 - 10.1007/s11664-012-2320-2
DO - 10.1007/s11664-012-2320-2
M3 - Article
AN - SCOPUS:84869508232
SN - 0361-5235
VL - 41
SP - 3348
EP - 3358
JO - Journal of Electronic Materials
JF - Journal of Electronic Materials
IS - 12
ER -