Effects of photoelectrochemical etching of n-polar and Ga-polar gallium nitride on sapphire substrates

Younghun Jung; Kwang Hyeon Baik; Fan Ren; Stephen J. Pearton; Jihyun Kim

doi:10.1149/1.3384713

Effects of photoelectrochemical etching of n-polar and Ga-polar gallium nitride on sapphire substrates

Younghun Jung, Kwang Hyeon Baik, Fan Ren, Stephen J. Pearton, Jihyun Kim

Research output: Contribution to journal › Article › peer-review

44 Citations (Scopus)

Abstract

We studied the effects of photo electrochemical (PEC) etching by using various concentrations (1, 2, and 4 M) of KOH solutions on both Ga- and N-face GaN layers on sapphire substrates. The Ga-face was chemically stable for KOH solutions, while by sharp contrast the KOH could etch the N-face, where the 6-fold symmetry was observed after the PEC etching. Surface texturing of GaN-based light emitting diodes and solar cells by KOH-based PEC etch could enhance the efficiency of GaN-based photonic devices by increasing the number of the scattering events and randomly changing the angles of the light.

Original language	English
Pages (from-to)	H676-H678
Journal	Journal of the Electrochemical Society
Volume	157
Issue number	6
DOIs	https://doi.org/10.1149/1.3384713
Publication status	Published - 2010

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Renewable Energy, Sustainability and the Environment
Condensed Matter Physics
Surfaces, Coatings and Films
Electrochemistry
Materials Chemistry

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10.1149/1.3384713

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abstract = "We studied the effects of photo electrochemical (PEC) etching by using various concentrations (1, 2, and 4 M) of KOH solutions on both Ga- and N-face GaN layers on sapphire substrates. The Ga-face was chemically stable for KOH solutions, while by sharp contrast the KOH could etch the N-face, where the 6-fold symmetry was observed after the PEC etching. Surface texturing of GaN-based light emitting diodes and solar cells by KOH-based PEC etch could enhance the efficiency of GaN-based photonic devices by increasing the number of the scattering events and randomly changing the angles of the light.",

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AU - Jung, Younghun

AU - Baik, Kwang Hyeon

AU - Ren, Fan

AU - Pearton, Stephen J.

AU - Kim, Jihyun

PY - 2010

Y1 - 2010

N2 - We studied the effects of photo electrochemical (PEC) etching by using various concentrations (1, 2, and 4 M) of KOH solutions on both Ga- and N-face GaN layers on sapphire substrates. The Ga-face was chemically stable for KOH solutions, while by sharp contrast the KOH could etch the N-face, where the 6-fold symmetry was observed after the PEC etching. Surface texturing of GaN-based light emitting diodes and solar cells by KOH-based PEC etch could enhance the efficiency of GaN-based photonic devices by increasing the number of the scattering events and randomly changing the angles of the light.

AB - We studied the effects of photo electrochemical (PEC) etching by using various concentrations (1, 2, and 4 M) of KOH solutions on both Ga- and N-face GaN layers on sapphire substrates. The Ga-face was chemically stable for KOH solutions, while by sharp contrast the KOH could etch the N-face, where the 6-fold symmetry was observed after the PEC etching. Surface texturing of GaN-based light emitting diodes and solar cells by KOH-based PEC etch could enhance the efficiency of GaN-based photonic devices by increasing the number of the scattering events and randomly changing the angles of the light.

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VL - 157

SP - H676-H678

JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

IS - 6

ER -

Effects of photoelectrochemical etching of n-polar and Ga-polar gallium nitride on sapphire substrates

Abstract

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