Effects of photoelectrochemical etching of n-polar and Ga-polar gallium nitride on sapphire substrates

Keyphrases

• Sapphire Substrate 100%
• Gallium Nitride 100%
• Ga-polar 100%
• Photoelectrochemical Etching 100%
• KOH Solution 66%
• GaN-based Light-emitting Diodes 33%
• GaN Layers 33%
• Surface Texture 33%
• GaN-based 33%
• N-face 33%
• Solar Cell 33%
• Photonic Devices 33%
• Chemically Stable 33%
• Photoelectrochemical 33%
• Electrochemical Etching 33%
• N-face GaN 33%

Material Science

• Sapphire 100%
• Gallium Nitride 100%
• Electrochemical Etching 100%
• Light-Emitting Diode 50%
• Solar Cell 50%
• Optical Device 50%