Effects of plasma enhanced chemical vapor deposition radio frequency on the properties of SiNx:H films

Kyung Dong Lee; Kwang Sun Ji; Soohyun Bae; Seongtak Kim; Hyunho Kim; Jae Eun Kim; Yoon Chung Nam; Sungjin Choi; Myeong Sang Jeong; Min Gu Kang; Hee Eun Song; Yoonmook Kang; Hae Seok Lee; Donghwan Kim

doi:10.1166/jnn.2017.14272

Effects of plasma enhanced chemical vapor deposition radio frequency on the properties of SiN_x:H films

Kyung Dong Lee, Kwang Sun Ji, Soohyun Bae, Seongtak Kim, Hyunho Kim, Jae Eun Kim, Yoon Chung Nam, Sungjin Choi, Myeong Sang Jeong, Min Gu Kang, Hee Eun Song, Yoonmook Kang, Hae Seok Lee, Donghwan Kim

Research output: Contribution to journal › Article › peer-review

Abstract

Hydrogenated silicon nitride (SiN_x:H) films were fabricated using plasma-enhanced chemical vapor deposition at high (13.56 MHz), low (400 kHz), and dual (13.56 MHz+400 kHz) radio frequencies. The antireflection and passivation qualities of each film were investigated before their application as the front surface layer of crystalline silicon solar cells. The use of a high radio frequency was observed to have a positive effect on the cell performance, which increased by 0.4% in comparison with the minimum value obtained for a 156 mm x 156 mm cell.

Original language	English
Pages (from-to)	4687-4693
Number of pages	7
Journal	Journal of Nanoscience and Nanotechnology
Volume	17
Issue number	7
DOIs	https://doi.org/10.1166/jnn.2017.14272
Publication status	Published - 2017

Bibliographical note

Publisher Copyright:
Copyright © 2017 American Scientific Publishers. All rights reserved.

Keywords

Passivation
Plasma-enhanced chemical vapor deposition frequency
Silicon nitride
Silicon solar cell
Surface damage

ASJC Scopus subject areas

Bioengineering
General Chemistry
Biomedical Engineering
General Materials Science
Condensed Matter Physics

Access to Document

10.1166/jnn.2017.14272

Cite this

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title = "Effects of plasma enhanced chemical vapor deposition radio frequency on the properties of SiNx:H films",

abstract = "Hydrogenated silicon nitride (SiNx:H) films were fabricated using plasma-enhanced chemical vapor deposition at high (13.56 MHz), low (400 kHz), and dual (13.56 MHz+400 kHz) radio frequencies. The antireflection and passivation qualities of each film were investigated before their application as the front surface layer of crystalline silicon solar cells. The use of a high radio frequency was observed to have a positive effect on the cell performance, which increased by 0.4% in comparison with the minimum value obtained for a 156 mm x 156 mm cell.",

keywords = "Passivation, Plasma-enhanced chemical vapor deposition frequency, Silicon nitride, Silicon solar cell, Surface damage",

author = "Lee, {Kyung Dong} and Ji, {Kwang Sun} and Soohyun Bae and Seongtak Kim and Hyunho Kim and Kim, {Jae Eun} and Nam, {Yoon Chung} and Sungjin Choi and Jeong, {Myeong Sang} and Kang, {Min Gu} and Song, {Hee Eun} and Yoonmook Kang and Lee, {Hae Seok} and Donghwan Kim",

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doi = "10.1166/jnn.2017.14272",

language = "English",

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pages = "4687--4693",

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T1 - Effects of plasma enhanced chemical vapor deposition radio frequency on the properties of SiNx:H films

AU - Lee, Kyung Dong

AU - Ji, Kwang Sun

AU - Bae, Soohyun

AU - Kim, Seongtak

AU - Kim, Hyunho

AU - Kim, Jae Eun

AU - Nam, Yoon Chung

AU - Choi, Sungjin

AU - Jeong, Myeong Sang

AU - Kang, Min Gu

AU - Song, Hee Eun

AU - Kang, Yoonmook

AU - Lee, Hae Seok

AU - Kim, Donghwan

PY - 2017

Y1 - 2017

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AB - Hydrogenated silicon nitride (SiNx:H) films were fabricated using plasma-enhanced chemical vapor deposition at high (13.56 MHz), low (400 kHz), and dual (13.56 MHz+400 kHz) radio frequencies. The antireflection and passivation qualities of each film were investigated before their application as the front surface layer of crystalline silicon solar cells. The use of a high radio frequency was observed to have a positive effect on the cell performance, which increased by 0.4% in comparison with the minimum value obtained for a 156 mm x 156 mm cell.

KW - Passivation

KW - Plasma-enhanced chemical vapor deposition frequency

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KW - Silicon solar cell

KW - Surface damage

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