Effects of post etch treatments on contaminated silicon surface due to CHF3/C2F6 reactive ion etching

H. H. Park; K. H. Kwon; S. H. Lee; S. Nahm; J. W. Lee; B. H. Koak; K. S. Suh; O. J. Kwon; J. L. Lee; G. Y. Yeom

Effects of post etch treatments on contaminated silicon surface due to CHF₃/C₂F₆ reactive ion etching

H. H. Park, K. H. Kwon, S. H. Lee, S. Nahm, J. W. Lee, B. H. Koak, K. S. Suh, O. J. Kwon, J. L. Lee, G. Y. Yeom

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The modification of silicon surface due to reactive ion etching (RIE) using a CHF₃/C₂F₆ plasma has been characterized using X-ray photoelectron spectroscopy (XPS), Rutherford backscattering spectroscopy (RBS), and high resolution transmission electron microscopy (HRTEM). A flat and uniform residue layer of about 40 angstrom in thickness has been observed in cross-sectional HRTEM work. The interface is sharply defined and smooth. Neither point defect cluster nor distinct planar defect has been found in substrate silicon lattice image. This is also confirmed by comparison scaled and energy shifted silicon surface peak of a control sample with the reactive ion etched sample using ion channeling RBS. NF₃, Cl₂, and SF₆ plasma treatments have been carried out to remove the residue layer. Among them, NF₃ treatment has been revealed to be the most effective. With 10 seconds exposure to NF₃ plasma, fluorocarbon residue film decomposes, and the remaining fluorine mostly binds to silicon; the fluorine completely disappears after the subsequent wet cleaning.

Original language	English
Title of host publication	Surface Chemical Cleaning and Passivation for Semiconductor Processing
Editors	Gregg S. Higashi, Eugene A. Irene, Tadahiro Ohmi
Publisher	Publ by Materials Research Society
Pages	243-248
Number of pages	6
ISBN (Print)	1558992138
Publication status	Published - 1993
Externally published	Yes
Event	Proceedings of the 1993 Spring Meeting of the Materials Research Society - San Francisco, CA, USA Duration: 1993 Apr 13 → 1993 Apr 15

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	315
ISSN (Print)	0272-9172

Other

Other	Proceedings of the 1993 Spring Meeting of the Materials Research Society
City	San Francisco, CA, USA
Period	93/4/13 → 93/4/15

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Cite this

Park, H. H., Kwon, K. H., Lee, S. H., Nahm, S., Lee, J. W., Koak, B. H., Suh, K. S., Kwon, O. J., Lee, J. L., & Yeom, G. Y. (1993). Effects of post etch treatments on contaminated silicon surface due to CHF₃/C₂F₆ reactive ion etching. In G. S. Higashi, E. A. Irene, & T. Ohmi (Eds.), Surface Chemical Cleaning and Passivation for Semiconductor Processing (pp. 243-248). (Materials Research Society Symposium Proceedings; Vol. 315). Publ by Materials Research Society.

Effects of post etch treatments on contaminated silicon surface due to CHF₃/C₂F₆ reactive ion etching. / Park, H. H.; Kwon, K. H.; Lee, S. H. et al.
Surface Chemical Cleaning and Passivation for Semiconductor Processing. ed. / Gregg S. Higashi; Eugene A. Irene; Tadahiro Ohmi. Publ by Materials Research Society, 1993. p. 243-248 (Materials Research Society Symposium Proceedings; Vol. 315).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Park, HH, Kwon, KH, Lee, SH, Nahm, S, Lee, JW, Koak, BH, Suh, KS, Kwon, OJ, Lee, JL & Yeom, GY 1993, Effects of post etch treatments on contaminated silicon surface due to CHF₃/C₂F₆ reactive ion etching. in GS Higashi, EA Irene & T Ohmi (eds), Surface Chemical Cleaning and Passivation for Semiconductor Processing. Materials Research Society Symposium Proceedings, vol. 315, Publ by Materials Research Society, pp. 243-248, Proceedings of the 1993 Spring Meeting of the Materials Research Society, San Francisco, CA, USA, 93/4/13.

Park HH, Kwon KH, Lee SH, Nahm S, Lee JW, Koak BH et al. Effects of post etch treatments on contaminated silicon surface due to CHF₃/C₂F₆ reactive ion etching. In Higashi GS, Irene EA, Ohmi T, editors, Surface Chemical Cleaning and Passivation for Semiconductor Processing. Publ by Materials Research Society. 1993. p. 243-248. (Materials Research Society Symposium Proceedings).

Park, H. H. ; Kwon, K. H. ; Lee, S. H. et al. / Effects of post etch treatments on contaminated silicon surface due to CHF₃/C₂F₆ reactive ion etching. Surface Chemical Cleaning and Passivation for Semiconductor Processing. editor / Gregg S. Higashi ; Eugene A. Irene ; Tadahiro Ohmi. Publ by Materials Research Society, 1993. pp. 243-248 (Materials Research Society Symposium Proceedings).

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title = "Effects of post etch treatments on contaminated silicon surface due to CHF3/C2F6 reactive ion etching",

abstract = "The modification of silicon surface due to reactive ion etching (RIE) using a CHF3/C2F6 plasma has been characterized using X-ray photoelectron spectroscopy (XPS), Rutherford backscattering spectroscopy (RBS), and high resolution transmission electron microscopy (HRTEM). A flat and uniform residue layer of about 40 angstrom in thickness has been observed in cross-sectional HRTEM work. The interface is sharply defined and smooth. Neither point defect cluster nor distinct planar defect has been found in substrate silicon lattice image. This is also confirmed by comparison scaled and energy shifted silicon surface peak of a control sample with the reactive ion etched sample using ion channeling RBS. NF3, Cl2, and SF6 plasma treatments have been carried out to remove the residue layer. Among them, NF3 treatment has been revealed to be the most effective. With 10 seconds exposure to NF3 plasma, fluorocarbon residue film decomposes, and the remaining fluorine mostly binds to silicon; the fluorine completely disappears after the subsequent wet cleaning.",

author = "Park, {H. H.} and Kwon, {K. H.} and Lee, {S. H.} and S. Nahm and Lee, {J. W.} and Koak, {B. H.} and Suh, {K. S.} and Kwon, {O. J.} and Lee, {J. L.} and Yeom, {G. Y.}",

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AU - Nahm, S.

AU - Lee, J. W.

AU - Koak, B. H.

AU - Suh, K. S.

AU - Kwon, O. J.

AU - Lee, J. L.

AU - Yeom, G. Y.

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N2 - The modification of silicon surface due to reactive ion etching (RIE) using a CHF3/C2F6 plasma has been characterized using X-ray photoelectron spectroscopy (XPS), Rutherford backscattering spectroscopy (RBS), and high resolution transmission electron microscopy (HRTEM). A flat and uniform residue layer of about 40 angstrom in thickness has been observed in cross-sectional HRTEM work. The interface is sharply defined and smooth. Neither point defect cluster nor distinct planar defect has been found in substrate silicon lattice image. This is also confirmed by comparison scaled and energy shifted silicon surface peak of a control sample with the reactive ion etched sample using ion channeling RBS. NF3, Cl2, and SF6 plasma treatments have been carried out to remove the residue layer. Among them, NF3 treatment has been revealed to be the most effective. With 10 seconds exposure to NF3 plasma, fluorocarbon residue film decomposes, and the remaining fluorine mostly binds to silicon; the fluorine completely disappears after the subsequent wet cleaning.

AB - The modification of silicon surface due to reactive ion etching (RIE) using a CHF3/C2F6 plasma has been characterized using X-ray photoelectron spectroscopy (XPS), Rutherford backscattering spectroscopy (RBS), and high resolution transmission electron microscopy (HRTEM). A flat and uniform residue layer of about 40 angstrom in thickness has been observed in cross-sectional HRTEM work. The interface is sharply defined and smooth. Neither point defect cluster nor distinct planar defect has been found in substrate silicon lattice image. This is also confirmed by comparison scaled and energy shifted silicon surface peak of a control sample with the reactive ion etched sample using ion channeling RBS. NF3, Cl2, and SF6 plasma treatments have been carried out to remove the residue layer. Among them, NF3 treatment has been revealed to be the most effective. With 10 seconds exposure to NF3 plasma, fluorocarbon residue film decomposes, and the remaining fluorine mostly binds to silicon; the fluorine completely disappears after the subsequent wet cleaning.

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