Effects of proton irradiation on dc characteristics of InAlN/GaN high electron mobility transistors

C. F. Lo, L. Liu, F. Ren, H. Y. Kim, J. Kim, S. J. Pearton, O. Laboutin, Yu Cao, J. W. Johnson, I. I. Kravchenko

Research output: Contribution to journalArticlepeer-review

19 Citations (Scopus)

Abstract

The effects of proton irradiation on the dc characteristics of InAlN/GaN high electron mobility transistors were investigated. In this study we used 5 MeV protons with doses varying from 2 × 1011 to 2 × 1015 cm-2. The transfer resistance and contact resistivity suffered more degradation as compared to the sheet resistance. With irradiation at the highest dose of 2 × 1015 cm-2, both forward- and reverse-bias gate currents were increased after proton irradiation. A negative threshold-shift and reduction of the saturation drain current were also observed as a result of radiation-induced carrier scattering and carrier removal. Devices irradiated with doses of 2 × 1011 to 2 × 1015 cm-2 exhibited minimal degradation of the saturation drain current and extrinsic transconductance. These results show that InAlN/GaN high electron mobility transistors are attractive for space-based applications when high-energy proton fluxes are present.

Original languageEnglish
Article number061201
JournalJournal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
Volume29
Issue number6
DOIs
Publication statusPublished - 2011 Nov

Bibliographical note

Funding Information:
The work performed at UF is supported by an AFOSR MURI monitored by Gregg Jessen and Kitt Reinhardt and by HDTRA (Don Silversmith) under U.S. DOD HDTRA Grant No. 1-11-1-0020. A portion of this research was conducted at the Center for Nanophase Materials Sciences, which is sponsored at Oak Ridge National Laboratory by the Office of Basic Energy Sciences, U.S. Department of Energy.

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Process Chemistry and Technology
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering
  • Materials Chemistry

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