Effects of proton irradiation on dc characteristics of InAlN/GaN high electron mobility transistors

C. F. Lo; L. Liu; F. Ren; H. Y. Kim; J. Kim; S. J. Pearton; O. Laboutin; Yu Cao; J. W. Johnson; I. I. Kravchenko

doi:10.1116/1.3644480

Effects of proton irradiation on dc characteristics of InAlN/GaN high electron mobility transistors

C. F. Lo, L. Liu, F. Ren, H. Y. Kim, J. Kim, S. J. Pearton, O. Laboutin, Yu Cao, J. W. Johnson, I. I. Kravchenko

Department of Chemical and Biological Engineering

Research output: Contribution to journal › Article › peer-review

19 Citations (Scopus)

Abstract

The effects of proton irradiation on the dc characteristics of InAlN/GaN high electron mobility transistors were investigated. In this study we used 5 MeV protons with doses varying from 2 × 10¹¹ to 2 × 10¹⁵ cm^-2. The transfer resistance and contact resistivity suffered more degradation as compared to the sheet resistance. With irradiation at the highest dose of 2 × 10¹⁵ cm^-2, both forward- and reverse-bias gate currents were increased after proton irradiation. A negative threshold-shift and reduction of the saturation drain current were also observed as a result of radiation-induced carrier scattering and carrier removal. Devices irradiated with doses of 2 × 10¹¹ to 2 × 10¹⁵ cm^-2 exhibited minimal degradation of the saturation drain current and extrinsic transconductance. These results show that InAlN/GaN high electron mobility transistors are attractive for space-based applications when high-energy proton fluxes are present.

Original language	English
Article number	061201
Journal	Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
Volume	29
Issue number	6
DOIs	https://doi.org/10.1116/1.3644480
Publication status	Published - 2011 Nov

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Instrumentation
Process Chemistry and Technology
Surfaces, Coatings and Films
Electrical and Electronic Engineering
Materials Chemistry

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Lo, C. F., Liu, L., Ren, F., Kim, H. Y., Kim, J., Pearton, S. J., Laboutin, O., Cao, Y., Johnson, J. W., & Kravchenko, I. I. (2011). Effects of proton irradiation on dc characteristics of InAlN/GaN high electron mobility transistors. Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics, 29(6), Article 061201. https://doi.org/10.1116/1.3644480

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title = "Effects of proton irradiation on dc characteristics of InAlN/GaN high electron mobility transistors",

abstract = "The effects of proton irradiation on the dc characteristics of InAlN/GaN high electron mobility transistors were investigated. In this study we used 5 MeV protons with doses varying from 2 × 1011 to 2 × 1015 cm-2. The transfer resistance and contact resistivity suffered more degradation as compared to the sheet resistance. With irradiation at the highest dose of 2 × 1015 cm-2, both forward- and reverse-bias gate currents were increased after proton irradiation. A negative threshold-shift and reduction of the saturation drain current were also observed as a result of radiation-induced carrier scattering and carrier removal. Devices irradiated with doses of 2 × 1011 to 2 × 1015 cm-2 exhibited minimal degradation of the saturation drain current and extrinsic transconductance. These results show that InAlN/GaN high electron mobility transistors are attractive for space-based applications when high-energy proton fluxes are present.",

author = "Lo, {C. F.} and L. Liu and F. Ren and Kim, {H. Y.} and J. Kim and Pearton, {S. J.} and O. Laboutin and Yu Cao and Johnson, {J. W.} and Kravchenko, {I. I.}",

note = "Funding Information: The work performed at UF is supported by an AFOSR MURI monitored by Gregg Jessen and Kitt Reinhardt and by HDTRA (Don Silversmith) under U.S. DOD HDTRA Grant No. 1-11-1-0020. A portion of this research was conducted at the Center for Nanophase Materials Sciences, which is sponsored at Oak Ridge National Laboratory by the Office of Basic Energy Sciences, U.S. Department of Energy. ",

year = "2011",

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doi = "10.1116/1.3644480",

language = "English",

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T1 - Effects of proton irradiation on dc characteristics of InAlN/GaN high electron mobility transistors

AU - Lo, C. F.

AU - Liu, L.

AU - Ren, F.

AU - Kim, H. Y.

AU - Kim, J.

AU - Pearton, S. J.

AU - Laboutin, O.

AU - Cao, Yu

AU - Johnson, J. W.

AU - Kravchenko, I. I.

N1 - Funding Information: The work performed at UF is supported by an AFOSR MURI monitored by Gregg Jessen and Kitt Reinhardt and by HDTRA (Don Silversmith) under U.S. DOD HDTRA Grant No. 1-11-1-0020. A portion of this research was conducted at the Center for Nanophase Materials Sciences, which is sponsored at Oak Ridge National Laboratory by the Office of Basic Energy Sciences, U.S. Department of Energy.

PY - 2011/11

Y1 - 2011/11

N2 - The effects of proton irradiation on the dc characteristics of InAlN/GaN high electron mobility transistors were investigated. In this study we used 5 MeV protons with doses varying from 2 × 1011 to 2 × 1015 cm-2. The transfer resistance and contact resistivity suffered more degradation as compared to the sheet resistance. With irradiation at the highest dose of 2 × 1015 cm-2, both forward- and reverse-bias gate currents were increased after proton irradiation. A negative threshold-shift and reduction of the saturation drain current were also observed as a result of radiation-induced carrier scattering and carrier removal. Devices irradiated with doses of 2 × 1011 to 2 × 1015 cm-2 exhibited minimal degradation of the saturation drain current and extrinsic transconductance. These results show that InAlN/GaN high electron mobility transistors are attractive for space-based applications when high-energy proton fluxes are present.

AB - The effects of proton irradiation on the dc characteristics of InAlN/GaN high electron mobility transistors were investigated. In this study we used 5 MeV protons with doses varying from 2 × 1011 to 2 × 1015 cm-2. The transfer resistance and contact resistivity suffered more degradation as compared to the sheet resistance. With irradiation at the highest dose of 2 × 1015 cm-2, both forward- and reverse-bias gate currents were increased after proton irradiation. A negative threshold-shift and reduction of the saturation drain current were also observed as a result of radiation-induced carrier scattering and carrier removal. Devices irradiated with doses of 2 × 1011 to 2 × 1015 cm-2 exhibited minimal degradation of the saturation drain current and extrinsic transconductance. These results show that InAlN/GaN high electron mobility transistors are attractive for space-based applications when high-energy proton fluxes are present.

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Effects of proton irradiation on dc characteristics of InAlN/GaN high electron mobility transistors

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