Effects of radiation damage in gan and related materials

S. J. Pearton, Fan Ren, Y. H. Hwang, Shun Li, Yueh Ling Hsieh, Alexander Y. Polyakov, Jihyun Kim

Research output: Chapter in Book/Report/Conference proceedingChapter


Due to their relatively high average bond strengths, GaN and related materials are inherently radiation hard when compared to the more conventional Si and GaAs. For example, experimental evidence suggests that GaN is several orders of magnitude more resistant to radiation damage than GaAs, ie. it can withstand radiation doses at least two orders of magnitude higher than those degrading GaAs of similar doping level. We review the literature on different types of ionizing radiation on GaN, InGaN and AlGaN materials and devices, including high electron mobility transistors and light-emitting diodes. A comparison of theoretical and experimental threshold displacement energies is given, along with a summary of energy levels introduced by different forms of radiation, carrier removal rates and role of existing defects. In terms of heterostructures, experimental data shows the radiation hardness decreases in the order AlN/GaN >AlGaN/GaN > InAlN/GaN, consistent with the average bond strengths in the Al-based materials. Future areas for research are identified, including the strong asymmetry in carrier removal rates in n- and p-type GaN and the interaction of radiation defects in doped nitrides with the high dislocation in this material.

Original languageEnglish
Title of host publicationGallium Nitride
Subtitle of host publicationStructure, Thermal Properties and Applications
PublisherNova Science Publishers, Inc.
Number of pages32
ISBN (Electronic)9781633213883
ISBN (Print)9781633213876
Publication statusPublished - 2014 Oct 1

Bibliographical note

Publisher Copyright:
© 2014 by Nova Science Publishers, Inc. All rights reserved.

ASJC Scopus subject areas

  • General Chemistry


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