Effects of rapid thermal annealing on the electrical properties of cobalt contact to p-GaN

Je Won Kim; Seong Il Kim; Yong Tae Kim; Sangsig Kim; Man Young Sung; In Hoon Choi

doi:10.1143/jjap.40.4450

Effects of rapid thermal annealing on the electrical properties of cobalt contact to p-GaN

Je Won Kim, Seong Il Kim, Yong Tae Kim, Sangsig Kim, Man Young Sung, In Hoon Choi

Research output: Contribution to journal › Article › peer-review

Abstract

The effects of rapid thermal annealing (RTA) on Co/p-GaN contacts in an O₂/N₂ atmosphere without intermediate metal were investigated. It was observed that the contact resistance (ρ_c) decreased with increasing RTA temperature and that the resistance was reduced by a factor of about 30 after RTA at 600°C in the O₂/N₂ atmosphere. The specific minimum contact resistance was in the 10^-2 Ωcm² range. Comparison of the R₀ and ρ_c values revealed that the rapid thermal annealing in the O₂/N₂ was more effective for reducing the contact resistance than conventional furnace annealing. The reason for the reduction of resistance was expected to be the increase of hole concentration due to the highly reactivated removal of hydrogen atoms in the p-GaN by RTA in the O₂/N₂ atmosphere.

Original language	English
Pages (from-to)	4450-4453
Number of pages	4
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	40
Issue number	7
DOIs	https://doi.org/10.1143/jjap.40.4450
Publication status	Published - 2001 Jul

Keywords

Cobalt
Contact
O/N atmosphere
Rapid thermal annealing
Resistance
p-GaN

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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10.1143/jjap.40.4450

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title = "Effects of rapid thermal annealing on the electrical properties of cobalt contact to p-GaN",

abstract = "The effects of rapid thermal annealing (RTA) on Co/p-GaN contacts in an O2/N2 atmosphere without intermediate metal were investigated. It was observed that the contact resistance (ρc) decreased with increasing RTA temperature and that the resistance was reduced by a factor of about 30 after RTA at 600°C in the O2/N2 atmosphere. The specific minimum contact resistance was in the 10-2 Ωcm2 range. Comparison of the R0 and ρc values revealed that the rapid thermal annealing in the O2/N2 was more effective for reducing the contact resistance than conventional furnace annealing. The reason for the reduction of resistance was expected to be the increase of hole concentration due to the highly reactivated removal of hydrogen atoms in the p-GaN by RTA in the O2/N2 atmosphere.",

keywords = "Cobalt, Contact, O/N atmosphere, Rapid thermal annealing, Resistance, p-GaN",

author = "Kim, {Je Won} and Kim, {Seong Il} and Kim, {Yong Tae} and Sangsig Kim and Sung, {Man Young} and Choi, {In Hoon}",

year = "2001",

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doi = "10.1143/jjap.40.4450",

language = "English",

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T1 - Effects of rapid thermal annealing on the electrical properties of cobalt contact to p-GaN

AU - Kim, Je Won

AU - Kim, Seong Il

AU - Kim, Yong Tae

AU - Kim, Sangsig

AU - Sung, Man Young

AU - Choi, In Hoon

PY - 2001/7

Y1 - 2001/7

N2 - The effects of rapid thermal annealing (RTA) on Co/p-GaN contacts in an O2/N2 atmosphere without intermediate metal were investigated. It was observed that the contact resistance (ρc) decreased with increasing RTA temperature and that the resistance was reduced by a factor of about 30 after RTA at 600°C in the O2/N2 atmosphere. The specific minimum contact resistance was in the 10-2 Ωcm2 range. Comparison of the R0 and ρc values revealed that the rapid thermal annealing in the O2/N2 was more effective for reducing the contact resistance than conventional furnace annealing. The reason for the reduction of resistance was expected to be the increase of hole concentration due to the highly reactivated removal of hydrogen atoms in the p-GaN by RTA in the O2/N2 atmosphere.

AB - The effects of rapid thermal annealing (RTA) on Co/p-GaN contacts in an O2/N2 atmosphere without intermediate metal were investigated. It was observed that the contact resistance (ρc) decreased with increasing RTA temperature and that the resistance was reduced by a factor of about 30 after RTA at 600°C in the O2/N2 atmosphere. The specific minimum contact resistance was in the 10-2 Ωcm2 range. Comparison of the R0 and ρc values revealed that the rapid thermal annealing in the O2/N2 was more effective for reducing the contact resistance than conventional furnace annealing. The reason for the reduction of resistance was expected to be the increase of hole concentration due to the highly reactivated removal of hydrogen atoms in the p-GaN by RTA in the O2/N2 atmosphere.

KW - Cobalt

KW - Contact

KW - O/N atmosphere

KW - Rapid thermal annealing

KW - Resistance

KW - p-GaN

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DO - 10.1143/jjap.40.4450

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JO - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

IS - 7

ER -

Effects of rapid thermal annealing on the electrical properties of cobalt contact to p-GaN

Abstract

Keywords

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