Effects of rapid thermal annealing on the electrical properties of cobalt contact to p-GaN

Je Won Kim, Seong Il Kim, Yong Tae Kim, Sangsig Kim, Man Young Sung, In Hoon Choi

Research output: Contribution to journalArticlepeer-review


The effects of rapid thermal annealing (RTA) on Co/p-GaN contacts in an O2/N2 atmosphere without intermediate metal were investigated. It was observed that the contact resistance (ρc) decreased with increasing RTA temperature and that the resistance was reduced by a factor of about 30 after RTA at 600°C in the O2/N2 atmosphere. The specific minimum contact resistance was in the 10-2 Ωcm2 range. Comparison of the R0 and ρc values revealed that the rapid thermal annealing in the O2/N2 was more effective for reducing the contact resistance than conventional furnace annealing. The reason for the reduction of resistance was expected to be the increase of hole concentration due to the highly reactivated removal of hydrogen atoms in the p-GaN by RTA in the O2/N2 atmosphere.

Original languageEnglish
Pages (from-to)4450-4453
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Issue number7
Publication statusPublished - 2001 Jul


  • Cobalt
  • Contact
  • O/N atmosphere
  • Rapid thermal annealing
  • Resistance
  • p-GaN

ASJC Scopus subject areas

  • General Engineering
  • General Physics and Astronomy


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