Effects of rapid thermal annealing on the electrical properties of heavily carbon-doped InGaAs

Chang Sik Son; Seong Il Kim; Tae Geun Kim; Yong Kim; Moo Sung Kim; Suk Ki Min

doi:10.1016/0038-1098(95)00791-1

Effects of rapid thermal annealing on the electrical properties of heavily carbon-doped InGaAs

Chang Sik Son, Seong Il Kim, Tae Geun Kim, Yong Kim, Moo Sung Kim, Suk Ki Min

Research output: Contribution to journal › Article › peer-review

Abstract

The effects of rapid thermal annealing (RTA) on the electrical properties of carbon-doped InGaAs epilayers have been analyzed by the Van der Pauw-Hall measurement. After RTA, the highest hole concentration of 3.3 × 10²⁰ cm^-3 at In_0.09Ga_0.91As epilayer was obtained. RTA processes cause the inactivated carbon atoms to be active by breaking C-H or C-H_x bonds in the epilayers. This leads to the increase of the hole concentration. Below the InAs mole fraction of 0.35, we have obtained the maximum activation efficiency of the carbon atoms at the RTA temperature of 650°C. The activation efficiency decreased with increasing InAs mole fraction. The type conversion from p-type to n-type took place after RTA at the InAs mole fraction of 0.44, while it occurred at that of 0.48 in the as-grown. The reason for the shift of the type conversion to the lower value after RTA would be due to the outdiffusion of In atoms in the InGaAs epilayer, and the activated carbon atoms would more effectively enter into In sites than As sites due to the outdiffusion of In atoms.

Original language	English
Pages (from-to)	475-478
Number of pages	4
Journal	Solid State Communications
Volume	98
Issue number	5
DOIs	https://doi.org/10.1016/0038-1098(95)00791-1
Publication status	Published - 1996 May
Externally published	Yes

ASJC Scopus subject areas

Chemistry(all)
Condensed Matter Physics
Materials Chemistry

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10.1016/0038-1098(95)00791-1

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@article{130765ec48bb4ccc8498ae37921f1978,

title = "Effects of rapid thermal annealing on the electrical properties of heavily carbon-doped InGaAs",

abstract = "The effects of rapid thermal annealing (RTA) on the electrical properties of carbon-doped InGaAs epilayers have been analyzed by the Van der Pauw-Hall measurement. After RTA, the highest hole concentration of 3.3 × 1020 cm-3 at In0.09Ga0.91As epilayer was obtained. RTA processes cause the inactivated carbon atoms to be active by breaking C-H or C-Hx bonds in the epilayers. This leads to the increase of the hole concentration. Below the InAs mole fraction of 0.35, we have obtained the maximum activation efficiency of the carbon atoms at the RTA temperature of 650°C. The activation efficiency decreased with increasing InAs mole fraction. The type conversion from p-type to n-type took place after RTA at the InAs mole fraction of 0.44, while it occurred at that of 0.48 in the as-grown. The reason for the shift of the type conversion to the lower value after RTA would be due to the outdiffusion of In atoms in the InGaAs epilayer, and the activated carbon atoms would more effectively enter into In sites than As sites due to the outdiffusion of In atoms.",

author = "Son, {Chang Sik} and Kim, {Seong Il} and Kim, {Tae Geun} and Yong Kim and Kim, {Moo Sung} and Min, {Suk Ki}",

note = "Funding Information: Acknowledgemen--ts This work was supportedin part by the endowmenptr ojecto f KIST with con-tractN o. 2E13640a ndin part by the SPRC through KOSEF.",

year = "1996",

month = may,

doi = "10.1016/0038-1098(95)00791-1",

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T1 - Effects of rapid thermal annealing on the electrical properties of heavily carbon-doped InGaAs

AU - Son, Chang Sik

AU - Kim, Seong Il

AU - Kim, Tae Geun

AU - Kim, Yong

AU - Kim, Moo Sung

AU - Min, Suk Ki

N1 - Funding Information: Acknowledgemen--ts This work was supportedin part by the endowmenptr ojecto f KIST with con-tractN o. 2E13640a ndin part by the SPRC through KOSEF.

PY - 1996/5

Y1 - 1996/5

N2 - The effects of rapid thermal annealing (RTA) on the electrical properties of carbon-doped InGaAs epilayers have been analyzed by the Van der Pauw-Hall measurement. After RTA, the highest hole concentration of 3.3 × 1020 cm-3 at In0.09Ga0.91As epilayer was obtained. RTA processes cause the inactivated carbon atoms to be active by breaking C-H or C-Hx bonds in the epilayers. This leads to the increase of the hole concentration. Below the InAs mole fraction of 0.35, we have obtained the maximum activation efficiency of the carbon atoms at the RTA temperature of 650°C. The activation efficiency decreased with increasing InAs mole fraction. The type conversion from p-type to n-type took place after RTA at the InAs mole fraction of 0.44, while it occurred at that of 0.48 in the as-grown. The reason for the shift of the type conversion to the lower value after RTA would be due to the outdiffusion of In atoms in the InGaAs epilayer, and the activated carbon atoms would more effectively enter into In sites than As sites due to the outdiffusion of In atoms.

AB - The effects of rapid thermal annealing (RTA) on the electrical properties of carbon-doped InGaAs epilayers have been analyzed by the Van der Pauw-Hall measurement. After RTA, the highest hole concentration of 3.3 × 1020 cm-3 at In0.09Ga0.91As epilayer was obtained. RTA processes cause the inactivated carbon atoms to be active by breaking C-H or C-Hx bonds in the epilayers. This leads to the increase of the hole concentration. Below the InAs mole fraction of 0.35, we have obtained the maximum activation efficiency of the carbon atoms at the RTA temperature of 650°C. The activation efficiency decreased with increasing InAs mole fraction. The type conversion from p-type to n-type took place after RTA at the InAs mole fraction of 0.44, while it occurred at that of 0.48 in the as-grown. The reason for the shift of the type conversion to the lower value after RTA would be due to the outdiffusion of In atoms in the InGaAs epilayer, and the activated carbon atoms would more effectively enter into In sites than As sites due to the outdiffusion of In atoms.

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DO - 10.1016/0038-1098(95)00791-1

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Effects of rapid thermal annealing on the electrical properties of heavily carbon-doped InGaAs

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