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Effects of rapid thermal annealing on the electrical properties of cobalt contact to p-GaN
Je Won Kim
*
, Seong Il Kim
, Yong Tae Kim
,
Sangsig Kim
, Man Young Sung
, In Hoon Choi
*
Corresponding author for this work
School of Electrical Engineering
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peer-review
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Keyphrases
Electrical Properties
100%
Cobalt
100%
Rapid Thermal Annealing
100%
P-GaN
100%
Contact Resistance
50%
N2 Atmosphere
50%
Thermal Annealing Temperature
16%
Hydrogen Atom
16%
Conventional Furnace Annealing
16%
C-value
16%
Resistance Reduction
16%
Hole Concentration
16%
Intermediate Metals
16%
Minimum Contact
16%
Material Science
Annealing
100%
Cobalt
100%
Contact Resistance
42%
Hole Concentration
14%
Engineering
Rapid Thermal Annealing
100%
Annealing Temperature
16%
Annealing Furnace
16%
Reduction of Resistance
16%
Intermediate Metal
16%
Hole Concentration
16%