Effects of Sc2O3 and MgO passivation layers on the output power of AlGaN/GaN HEMTs

J. K. Gillespie; R. C. Fitch; J. Sewell; R. Dettmer; G. D. Via; A. Crespo; T. J. Jenkins; B. Luo; R. Mehandru; J. Kim; F. Ren; B. P. Gila; A. H. Onstine; C. R. Abernathy; S. J. Pearton

doi:10.1109/LED.2002.802592

Effects of Sc₂O₃ and MgO passivation layers on the output power of AlGaN/GaN HEMTs

J. K. Gillespie, R. C. Fitch, J. Sewell, R. Dettmer, G. D. Via, A. Crespo, T. J. Jenkins, B. Luo, R. Mehandru, J. Kim, F. Ren, B. P. Gila, A. H. Onstine, C. R. Abernathy, S. J. Pearton

Research output: Contribution to journal › Article › peer-review

52 Citations (Scopus)

Abstract

The low temperature (100 °C) deposition of Sc₂O₃ or MgO layers is found to significantly increase the output power of AlGaN/GaN HEMTs. At 4 GHz, there was a better than 3 dB increase in output power of 0.5 × 100 μm² HEMTs for both types of oxide passivation layers. Both Sc₂O₃ and MgO produced larger output power increases at 4 GHz than conventional plasma-enhanced chemical vapor deposited (PECVD) SiN_x passivation which typically showed ≤ dB increase on the same types of devices. The HEMT gain also in general remained linear over a wider input power range with the Sc₂O₃ or MgO passivation. These films appear promising for reducing the effects of surface states on the dc and rf performance of AlGaN/GaN HEMTs.

Original language	English
Pages (from-to)	505-507
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	23
Issue number	9
DOIs	https://doi.org/10.1109/LED.2002.802592
Publication status	Published - 2002 Sept
Externally published	Yes

Bibliographical note

Funding Information:
Manuscript received May 13, 2002; revised July 1, 2002. This work was supported in part by Office of Naval Research under Contract N00014-98-1-02-04 and National Science Foundation under Contracts DMR0101438 and CTS 9901173. The review of this letter was arranged by Editor D. Ritter.

Keywords

GaN
MODFETs
Passivation
Surface states

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/LED.2002.802592

Cite this

Gillespie, J. K., Fitch, R. C., Sewell, J., Dettmer, R., Via, G. D., Crespo, A., Jenkins, T. J., Luo, B., Mehandru, R., Kim, J., Ren, F., Gila, B. P., Onstine, A. H., Abernathy, C. R., & Pearton, S. J. (2002). Effects of Sc₂O₃ and MgO passivation layers on the output power of AlGaN/GaN HEMTs. IEEE Electron Device Letters, 23(9), 505-507. https://doi.org/10.1109/LED.2002.802592

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title = "Effects of Sc2O3 and MgO passivation layers on the output power of AlGaN/GaN HEMTs",

abstract = "The low temperature (100 °C) deposition of Sc2O3 or MgO layers is found to significantly increase the output power of AlGaN/GaN HEMTs. At 4 GHz, there was a better than 3 dB increase in output power of 0.5 × 100 μm2 HEMTs for both types of oxide passivation layers. Both Sc2O3 and MgO produced larger output power increases at 4 GHz than conventional plasma-enhanced chemical vapor deposited (PECVD) SiNx passivation which typically showed ≤ dB increase on the same types of devices. The HEMT gain also in general remained linear over a wider input power range with the Sc2O3 or MgO passivation. These films appear promising for reducing the effects of surface states on the dc and rf performance of AlGaN/GaN HEMTs.",

keywords = "GaN, MODFETs, Passivation, Surface states",

author = "Gillespie, {J. K.} and Fitch, {R. C.} and J. Sewell and R. Dettmer and Via, {G. D.} and A. Crespo and Jenkins, {T. J.} and B. Luo and R. Mehandru and J. Kim and F. Ren and Gila, {B. P.} and Onstine, {A. H.} and Abernathy, {C. R.} and Pearton, {S. J.}",

note = "Funding Information: Manuscript received May 13, 2002; revised July 1, 2002. This work was supported in part by Office of Naval Research under Contract N00014-98-1-02-04 and National Science Foundation under Contracts DMR0101438 and CTS 9901173. The review of this letter was arranged by Editor D. Ritter.",

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doi = "10.1109/LED.2002.802592",

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AU - Gillespie, J. K.

AU - Fitch, R. C.

AU - Sewell, J.

AU - Dettmer, R.

AU - Via, G. D.

AU - Crespo, A.

AU - Jenkins, T. J.

AU - Luo, B.

AU - Mehandru, R.

AU - Kim, J.

AU - Ren, F.

AU - Gila, B. P.

AU - Onstine, A. H.

AU - Abernathy, C. R.

AU - Pearton, S. J.

N1 - Funding Information: Manuscript received May 13, 2002; revised July 1, 2002. This work was supported in part by Office of Naval Research under Contract N00014-98-1-02-04 and National Science Foundation under Contracts DMR0101438 and CTS 9901173. The review of this letter was arranged by Editor D. Ritter.

PY - 2002/9

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AB - The low temperature (100 °C) deposition of Sc2O3 or MgO layers is found to significantly increase the output power of AlGaN/GaN HEMTs. At 4 GHz, there was a better than 3 dB increase in output power of 0.5 × 100 μm2 HEMTs for both types of oxide passivation layers. Both Sc2O3 and MgO produced larger output power increases at 4 GHz than conventional plasma-enhanced chemical vapor deposited (PECVD) SiNx passivation which typically showed ≤ dB increase on the same types of devices. The HEMT gain also in general remained linear over a wider input power range with the Sc2O3 or MgO passivation. These films appear promising for reducing the effects of surface states on the dc and rf performance of AlGaN/GaN HEMTs.

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