Abstract
During final annealing at 1200°C under a high vacuum, changes in recrystallization texture with final annealing time were observed in thin-gauged 3 % Si-Fc alloys. In the alloy containing 30 ppm bulk sulfur, the recrystallization texture varied from the {111} <uvw> to the {001} <uv\v> and finally to the {110}<001> Goss texture, resulting in higher magnetic induction than 1.90 T. The trough in magnetic induction, which corresponds to the relatively high surface-segregated sulfur rangeais due to the magnetically detrimental effect of those textures, i.e. the {111} <uvw> and the {001} <uvw>. In the alloy containing 6 ppm bulk sulfur, the correlation between magnetic induction and surface-segregated sulfur was.the same as that in the other alloy. These results clearly indicate that the surface energy induced recrystallization in the thin-gauged 3 % Si-Fc alloys is strongly affected by the segregation and the evaporation of sulfur.
Original language | English |
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Pages (from-to) | 3373-3375 |
Number of pages | 3 |
Journal | IEEE Transactions on Magnetics |
Volume | 35 |
Issue number | 5 PART 2 |
DOIs | |
Publication status | Published - 1999 |
Keywords
- 3 % si-fe
- Recrystallization
- Sulfur segregation
- Surface energy
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering