Abstract
The AlGaN/GaN high electron mobility transistor (HEMT) is considered a promising device for high-power, high-frequency, and high-temperature applications, as well as high-sensitivity sensors. However, several issues related to mobility, interface properties, and series resistance need to be clarified for a better understanding of the physical operation of AlGaN/GaN HEMTs and for further optimization of their performance. In this work, the electrical properties of AlGaN/GaN HEMTs, including the effects of series resistance, and interface properties with mobility degradation factors were investigated in detail. In addition, the low-frequency noise behavior of AlGaN/GaN HEMTs was examined with a carrier number fluctuation model that considered series resistance effects.
Original language | English |
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Pages (from-to) | 40-44 |
Number of pages | 5 |
Journal | Microelectronic Engineering |
Volume | 199 |
DOIs | |
Publication status | Published - 2018 Nov 5 |
Bibliographical note
Funding Information:This work was supported by the Korea Institute of Science and Technology (KIST) Institutional Program, the National Research Foundation of Korea ( NRF-2017M3A7B4049167 and NRF-2016R1A6A3A11933511 ), the Nano∙Material Technology Development Program through the National Research Foundation of Korea (NRF) funded by Ministry of Science, ICT and Future Planning ( 2015M3A7B7044548 ), the Future Semiconductor Device Technology Development Program ( 10067739 ) funded by Ministry of Trade, Industry and Energy (MOTIE), the Korea Semiconductor Research Consortium (KSRC) and a Korea University Grant.
Publisher Copyright:
© 2018 Elsevier B.V.
Keywords
- AlGaN/GaN HEMTs
- Effective mobility
- Low-frequency noise and carrier number fluctuation model
- Mobility degradation factors
- Series resistance
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Surfaces, Coatings and Films
- Electrical and Electronic Engineering