@inproceedings{95d6b31e31ea421183ed22784ad8feb2,
title = "Effects of substrate temperature on the electrical and the optical properties of n-type ZnO/p-type 4H-SiC",
abstract = "We investigated the effect of the substrate temperature on the electrical and the optical properties of ZnO/4H-SiC structures. The n-type ZnO layer was grown on p-type 4H-SiC substrate by pulsed laser deposition to form p-n hetero-junction diode structure. The n-type ZnO thin films were deposited by pulsed laser deposition at different temperatures of 200, 400, and 600 °C, respectively. It was shown from transmission line method (TLM) and auger electron spectroscopy (AES) data that the sheet resistance of ZnO on SiC was increased from ∼760 Ω/square to ∼4000 Ω/square as the deposition temperature increases and the oxygen outdiffusion decreases. The I-V characteristics with and without illumination have also been studied.",
keywords = "N-type ZnO, P-type 4H-SiC, Substrate temperature",
author = "Jung, {Ji Chul} and Kim, {Ji Hong} and Do, {Kang Min} and Moon, {Byung Moo} and Joo, {Sung Jae} and Wook Bahng and Kim, {Sang Cheol} and Kim, {Nam Kyun} and Koo, {Sang Mo}",
note = "Copyright: Copyright 2020 Elsevier B.V., All rights reserved.; 14th International Conference on Silicon Carbide and Related Materials 2011, ICSCRM 2011 ; Conference date: 11-09-2011 Through 16-09-2011",
year = "2012",
doi = "10.4028/www.scientific.net/MSF.717-720.1327",
language = "English",
isbn = "9783037854198",
series = "Materials Science Forum",
publisher = "Trans Tech Publications Ltd",
pages = "1327--1330",
editor = "Devaty, {Robert P.} and Michael Dudley and Chow, {T. Paul} and Neudeck, {Philip G.}",
booktitle = "Silicon Carbide and Related Materials 2011, ICSCRM 2011",
}