Effects of sulfur passivation on Ti/Al ohmic contacts to n-type GaN using CH3CSNH2 solution

June O. Song, Seong Ju Park, Tae Yeon Seong

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38 Citations (Scopus)


We investigate the effect of CH3CSNH2 solution treatment on Ti/Al ohmic contacts to n-GaN:Si (3×1018cm -3). It is shown that the sulfide treatment results in a drastic increase in the photoluminescence intensity, compared with that of the untreated sample. Current-voltage (I-V) results show that the sulfide treatment significantly improves the specific contact resistance. The annealing of the sulfide-treated sample (at 700°C) results in a specific contact resistance of 3.1×10-6cm2. X-ray photoemission spectroscopy (XPS) results show that the Ga 2p core levels shift toward the higher-binding energy side by 0.2 eV for the sulfide-treated sample and by 0.4 eV for the annealed (sulfide-treated) sample, compared with that of the untreated one. It is further shown that the intensity of O 1s core level decreases with the sulfide treatment. Based on the I-V and XPS results, the sulfide and annealing treatment dependence of the specific contact resistance is discussed.

Original languageEnglish
Pages (from-to)3129-3131
Number of pages3
JournalApplied Physics Letters
Issue number17
Publication statusPublished - 2002 Apr 29
Externally publishedYes

Bibliographical note

Copyright 2011 Elsevier B.V., All rights reserved.

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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