Effects of surfactant concentration on step height reduction of SiO 2 in chemical mechanical polishing with ceria slurry

B. J. Cho, Y. M. Lee, D. H. Shin, D. S. Lim, J. H. Shin, J. Y. Park, Y. S. Choi

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    3 Citations (Scopus)

    Abstract

    Ceria based slurries with and without PVP were prepared for the polishing of patterned and blanket wafers. The changes in the cross-sectional profiles of the oxide as a function of the polishing time and surfactant concentration were analyzed, in order to understand the mechanism by which the step height of the oxide is reduced during the CMP process. The reduction in the thickness as a function of the polishing time varied with the PVP surfactant concentration in the patterned wafer. When the surfactant concentration was increased to 0.8wt%, the material removal rate of oxide in the patterned wafer approached a maximum. The maximum removal rate observed at a surfactant concentration of 0.8wt% was explained by the competing effects of the increasing number of active particles and the increasing thickness of the viscous layer due to the addition of surfactant.

    Original languageEnglish
    Title of host publicationMulti-functional Materials and Structures - International Conference on Multifunctional Materials and Structures
    PublisherTrans Tech Publications
    Pages1494-1497
    Number of pages4
    ISBN (Print)0878493786, 9780878493784
    Publication statusPublished - 2008
    EventMulti-functional Materials and Structures - International Conference on Multifunctional Materials and Structures - Hong Kong, P.R., China
    Duration: 2008 Jul 282008 Jul 31

    Publication series

    NameAdvanced Materials Research
    Volume47-50 PART 2
    ISSN (Print)1022-6680

    Other

    OtherMulti-functional Materials and Structures - International Conference on Multifunctional Materials and Structures
    Country/TerritoryChina
    CityHong Kong, P.R.
    Period08/7/2808/7/31

    Keywords

    • Ceria slurry
    • Oxide-CMP
    • Removal rate
    • Surfactant

    ASJC Scopus subject areas

    • General Engineering

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