Effects of Ta-substitution on the dielectric properties of Ba6Ti2(Nb1-xTax)8O30 thin films

Chin Moo Cho; Jeong Ryeol Kim; Jun Hong Noh; Kug Sun Hong

doi:10.1016/j.jeurceramsoc.2006.11.016

Effects of Ta-substitution on the dielectric properties of Ba₆Ti₂(Nb_1-xTa_x)₈O₃₀ thin films

Chin Moo Cho
, Jeong Ryeol Kim
, Jun Hong Noh
, Kug Sun Hong^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

Tunable Ba₆Ti₂(Nb_1-xTa_x)₈O₃₀ (BTN-xTa; x = 0, 0.25, 0.4) thin films with a tetragonal tungsten bronze structure (TTB) were deposited on platinized Si substrates using the pulsed laser deposition (PLD) technique and their properties were investigated from the viewpoint of orientation and ferroelectric phase transition. Crystal structures and dielectric properties were characterized using an X-ray diffractometer and an impedance analyzer. Pure BTN (BTN-0Ta) thin films showed tunability as high as 60% and the tunability decreased as the amounts of Ta-substitution increased at 150 kV/cm and at 1 MHz. The dielectric constants also decreased from 436 to 88 at 1 MHz through the Ta-substitution. The low tunability and dielectric constants of Ta-substituted thin films were mainly ascribed to the lowered ferroelectric transition temperature (T_c). Ferroelectric BTN (BTN-0Ta) thin films may have been changed into a paraelectric state through the Ta-substitution since the T_c of BTN thin films were shifted to temperatures far below room temperatures (approximately -60 °C).

Original language	English
Pages (from-to)	2927-2931
Number of pages	5
Journal	Journal of the European Ceramic Society
Volume	27
Issue number	8-9 SPEC. ISS.
DOIs	https://doi.org/10.1016/j.jeurceramsoc.2006.11.016
Publication status	Published - 2007
Externally published	Yes

Bibliographical note

Funding Information:
This research was supported by a grant from the Core Technology Development Program funded by the Ministry of Commerce, Industry and Energy (MOCIE), Republic of Korea.

Copyright:
Copyright 2008 Elsevier B.V., All rights reserved.

Keywords

Dielectric properties
Ferroelectric properties
Films
PLD
X-ray methods

ASJC Scopus subject areas

Ceramics and Composites
Materials Chemistry

Access to Document

10.1016/j.jeurceramsoc.2006.11.016

Cite this

@article{ef66d21db5de42f2bf945299b06aff0a,

title = "Effects of Ta-substitution on the dielectric properties of Ba6Ti2(Nb1-xTax)8O30 thin films",

abstract = "Tunable Ba6Ti2(Nb1-xTax)8O30 (BTN-xTa; x = 0, 0.25, 0.4) thin films with a tetragonal tungsten bronze structure (TTB) were deposited on platinized Si substrates using the pulsed laser deposition (PLD) technique and their properties were investigated from the viewpoint of orientation and ferroelectric phase transition. Crystal structures and dielectric properties were characterized using an X-ray diffractometer and an impedance analyzer. Pure BTN (BTN-0Ta) thin films showed tunability as high as 60\% and the tunability decreased as the amounts of Ta-substitution increased at 150 kV/cm and at 1 MHz. The dielectric constants also decreased from 436 to 88 at 1 MHz through the Ta-substitution. The low tunability and dielectric constants of Ta-substituted thin films were mainly ascribed to the lowered ferroelectric transition temperature (Tc). Ferroelectric BTN (BTN-0Ta) thin films may have been changed into a paraelectric state through the Ta-substitution since the Tc of BTN thin films were shifted to temperatures far below room temperatures (approximately -60 °C).",

keywords = "Dielectric properties, Ferroelectric properties, Films, PLD, X-ray methods",

author = "Cho, \{Chin Moo\} and Kim, \{Jeong Ryeol\} and Noh, \{Jun Hong\} and Hong, \{Kug Sun\}",

note = "Funding Information: This research was supported by a grant from the Core Technology Development Program funded by the Ministry of Commerce, Industry and Energy (MOCIE), Republic of Korea. Copyright: Copyright 2008 Elsevier B.V., All rights reserved.",

year = "2007",

doi = "10.1016/j.jeurceramsoc.2006.11.016",

language = "English",

volume = "27",

pages = "2927--2931",

journal = "Journal of the European Ceramic Society",

issn = "0955-2219",

publisher = "Elsevier B.V.",

number = "8-9 SPEC. ISS.",

}

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T1 - Effects of Ta-substitution on the dielectric properties of Ba6Ti2(Nb1-xTax)8O30 thin films

AU - Cho, Chin Moo

AU - Kim, Jeong Ryeol

AU - Noh, Jun Hong

AU - Hong, Kug Sun

N1 - Funding Information: This research was supported by a grant from the Core Technology Development Program funded by the Ministry of Commerce, Industry and Energy (MOCIE), Republic of Korea. Copyright: Copyright 2008 Elsevier B.V., All rights reserved.

PY - 2007

Y1 - 2007

N2 - Tunable Ba6Ti2(Nb1-xTax)8O30 (BTN-xTa; x = 0, 0.25, 0.4) thin films with a tetragonal tungsten bronze structure (TTB) were deposited on platinized Si substrates using the pulsed laser deposition (PLD) technique and their properties were investigated from the viewpoint of orientation and ferroelectric phase transition. Crystal structures and dielectric properties were characterized using an X-ray diffractometer and an impedance analyzer. Pure BTN (BTN-0Ta) thin films showed tunability as high as 60% and the tunability decreased as the amounts of Ta-substitution increased at 150 kV/cm and at 1 MHz. The dielectric constants also decreased from 436 to 88 at 1 MHz through the Ta-substitution. The low tunability and dielectric constants of Ta-substituted thin films were mainly ascribed to the lowered ferroelectric transition temperature (Tc). Ferroelectric BTN (BTN-0Ta) thin films may have been changed into a paraelectric state through the Ta-substitution since the Tc of BTN thin films were shifted to temperatures far below room temperatures (approximately -60 °C).

AB - Tunable Ba6Ti2(Nb1-xTax)8O30 (BTN-xTa; x = 0, 0.25, 0.4) thin films with a tetragonal tungsten bronze structure (TTB) were deposited on platinized Si substrates using the pulsed laser deposition (PLD) technique and their properties were investigated from the viewpoint of orientation and ferroelectric phase transition. Crystal structures and dielectric properties were characterized using an X-ray diffractometer and an impedance analyzer. Pure BTN (BTN-0Ta) thin films showed tunability as high as 60% and the tunability decreased as the amounts of Ta-substitution increased at 150 kV/cm and at 1 MHz. The dielectric constants also decreased from 436 to 88 at 1 MHz through the Ta-substitution. The low tunability and dielectric constants of Ta-substituted thin films were mainly ascribed to the lowered ferroelectric transition temperature (Tc). Ferroelectric BTN (BTN-0Ta) thin films may have been changed into a paraelectric state through the Ta-substitution since the Tc of BTN thin films were shifted to temperatures far below room temperatures (approximately -60 °C).

KW - Dielectric properties

KW - Ferroelectric properties

KW - Films

KW - PLD

KW - X-ray methods

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DO - 10.1016/j.jeurceramsoc.2006.11.016

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