Effects of the AlSb buffer layer and the InAs channel thickness on the electrical properties of InAs/AlSb-based 2-DEG HEMT structures

S. H. Shin; J. Y. Lim; J. D. Song; H. J. Kim; S. H. Han; T. G. Kim

doi:10.3938/jkps.53.2719

Effects of the AlSb buffer layer and the InAs channel thickness on the electrical properties of InAs/AlSb-based 2-DEG HEMT structures

S. H. Shin, J. Y. Lim, J. D. Song, H. J. Kim, S. H. Han, T. G. Kim

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

In this study, the effects of various AlSb buffer layers and InAs channel thicknesses on the electrical properties of InAs/AlSb-based 2-dimensional- electron-gas (2-DEG) inverted-High Electron Mobility Transistor (HEMT) structures for applications to spin-Field Effective Transistor (FET) is reported. The optimized ∼11-nm-thick InAs/AlSb HEMT on AlSb (0.5 μm)/10 repetition of GaSb/AlSb superlattices/AlSb (1 μm) shows noticeable values of the electron mobility (∼106,900 cm²/Vs at 77 K and 25,870 cm ²/Vs at 300 K) and those are comparable to the state-of-the-art, considering impurity scattering due to doping.

Original language	English
Pages (from-to)	2719-2724
Number of pages	6
Journal	Journal of the Korean Physical Society
Volume	53
Issue number	5 PART 1
DOIs	https://doi.org/10.3938/jkps.53.2719
Publication status	Published - 2008 Nov

Keywords

2-DEG
AlSb
HEMT
InAs
Molecular beam epitaxy

ASJC Scopus subject areas

Physics and Astronomy(all)

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10.3938/jkps.53.2719

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title = "Effects of the AlSb buffer layer and the InAs channel thickness on the electrical properties of InAs/AlSb-based 2-DEG HEMT structures",

abstract = "In this study, the effects of various AlSb buffer layers and InAs channel thicknesses on the electrical properties of InAs/AlSb-based 2-dimensional- electron-gas (2-DEG) inverted-High Electron Mobility Transistor (HEMT) structures for applications to spin-Field Effective Transistor (FET) is reported. The optimized ∼11-nm-thick InAs/AlSb HEMT on AlSb (0.5 μm)/10 repetition of GaSb/AlSb superlattices/AlSb (1 μm) shows noticeable values of the electron mobility (∼106,900 cm2/Vs at 77 K and 25,870 cm 2/Vs at 300 K) and those are comparable to the state-of-the-art, considering impurity scattering due to doping.",

keywords = "2-DEG, AlSb, HEMT, InAs, Molecular beam epitaxy",

author = "Shin, {S. H.} and Lim, {J. Y.} and Song, {J. D.} and Kim, {H. J.} and Han, {S. H.} and Kim, {T. G.}",

year = "2008",

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AU - Shin, S. H.

AU - Lim, J. Y.

AU - Song, J. D.

AU - Kim, H. J.

AU - Han, S. H.

AU - Kim, T. G.

PY - 2008/11

Y1 - 2008/11

N2 - In this study, the effects of various AlSb buffer layers and InAs channel thicknesses on the electrical properties of InAs/AlSb-based 2-dimensional- electron-gas (2-DEG) inverted-High Electron Mobility Transistor (HEMT) structures for applications to spin-Field Effective Transistor (FET) is reported. The optimized ∼11-nm-thick InAs/AlSb HEMT on AlSb (0.5 μm)/10 repetition of GaSb/AlSb superlattices/AlSb (1 μm) shows noticeable values of the electron mobility (∼106,900 cm2/Vs at 77 K and 25,870 cm 2/Vs at 300 K) and those are comparable to the state-of-the-art, considering impurity scattering due to doping.

AB - In this study, the effects of various AlSb buffer layers and InAs channel thicknesses on the electrical properties of InAs/AlSb-based 2-dimensional- electron-gas (2-DEG) inverted-High Electron Mobility Transistor (HEMT) structures for applications to spin-Field Effective Transistor (FET) is reported. The optimized ∼11-nm-thick InAs/AlSb HEMT on AlSb (0.5 μm)/10 repetition of GaSb/AlSb superlattices/AlSb (1 μm) shows noticeable values of the electron mobility (∼106,900 cm2/Vs at 77 K and 25,870 cm 2/Vs at 300 K) and those are comparable to the state-of-the-art, considering impurity scattering due to doping.

KW - 2-DEG

KW - AlSb

KW - HEMT

KW - InAs

KW - Molecular beam epitaxy

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JO - Journal of the Korean Physical Society

JF - Journal of the Korean Physical Society

IS - 5 PART 1

ER -

Effects of the AlSb buffer layer and the InAs channel thickness on the electrical properties of InAs/AlSb-based 2-DEG HEMT structures

Abstract

Keywords

ASJC Scopus subject areas

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