Abstract
In this study, the effects of various AlSb buffer layers and InAs channel thicknesses on the electrical properties of InAs/AlSb-based 2-dimensional- electron-gas (2-DEG) inverted-High Electron Mobility Transistor (HEMT) structures for applications to spin-Field Effective Transistor (FET) is reported. The optimized ∼11-nm-thick InAs/AlSb HEMT on AlSb (0.5 μm)/10 repetition of GaSb/AlSb superlattices/AlSb (1 μm) shows noticeable values of the electron mobility (∼106,900 cm2/Vs at 77 K and 25,870 cm 2/Vs at 300 K) and those are comparable to the state-of-the-art, considering impurity scattering due to doping.
Original language | English |
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Pages (from-to) | 2719-2724 |
Number of pages | 6 |
Journal | Journal of the Korean Physical Society |
Volume | 53 |
Issue number | 5 PART 1 |
DOIs | |
Publication status | Published - 2008 Nov |
Keywords
- 2-DEG
- AlSb
- HEMT
- InAs
- Molecular beam epitaxy
ASJC Scopus subject areas
- Physics and Astronomy(all)