Abstract
The self-field from a word line containing a soft magnetic keeper layer in the geometry relevant to magnetic random access memory is calculated by using a finite-element method. A significant increase of the self-field is observed by the introduction of the soft magnetic keeper layer. Furthermore, the magnitude of the self-field is found to vary greatly with the aspect ratio of the word line in the presence of the keeper layer. In the aspect ratio range from 0.25 to 16 but at a constant cross-sectional area of 1μm2, the self-field initially increases with the increase of the aspect ratio, reaches a maximum at an aspect ratio of 4, and then decreases with the further increase of the aspect ratio. The present results emphasize the importance of optimizing the shape of a word line containing a soft magnetic keeper layer.
Original language | English |
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Pages (from-to) | 2857-2859 |
Number of pages | 3 |
Journal | IEEE Transactions on Magnetics |
Volume | 39 |
Issue number | 5 II |
DOIs | |
Publication status | Published - 2003 Sept |
Bibliographical note
Funding Information:Manuscript received January 6, 2003. This work was supported by the Tera-Level Nanodevices Project (a 21C Frontier Program Funded by the Korean Ministry of Science and Technology). K. S. Kim and C. E. Lee are with the Department of Physics, Korea University, Seoul 136-701, Korea (e-mail: [email protected]; [email protected]). S. H. Lim is with the Nano Device Research Center, Korea Institute of Science and Technology, Seoul 136-791, Korea (e-mail: [email protected]). Digital Object Identifier 10.1109/TMAG.2003.816245 Fig. 1. Geometry of the word line without and with a keeper layer. The distance between the word line and the free layer (h) and the keeper layer thickness (d) were fixed at 0.13 and 0.03 m, respectively. The definition of the axes is also shown.
Keywords
- Aspect ratio
- Cladding
- Computer simulation
- Magnetic random access memory (MRAM)
- Self-field
- Word line coated with a keeper layer
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering