Effects of the shape anisotropy on the giant magnetoresistance properties

K. Y. Kim; S. H. Lim; G. S. Park; M. H. Blamire; J. E. Evetts

doi:10.1109/20.952607

Effects of the shape anisotropy on the giant magnetoresistance properties

K. Y. Kim, S. H. Lim, G. S. Park, M. H. Blamire, J. E. Evetts

Research output: Contribution to journal › Conference article › peer-review

8 Citations (Scopus)

Abstract

For the application of giant magnetoresistance (GMR) devices such as magnetic recording head or magnetic field sensors, spin valves are patterned on micron scales. In an attempt to understand shape anisotropy effect and switching behaviors of patterned structure, we measured GMR responses of patterned stripes with different aspect ratios and angular dependence of GMR responses with respect to the applied field angles. In case of lower aspect ratio (20:6), MR ratio decreased gradually with the increase in angle between applied field and pinning direction. In case of high aspect ratio (20:2), MR ratio did not decrease up to a certain angle, after that down to the lower value rapidly. In addition, there is increase in coercivities of free and pinned layers, which is due to the shape anisotropy with respect to the high aspect ratio. This trend agrees well with the simulated GMR curves using single domain model where we consider on self-demagnetization and interlayer magnetostatic coupling effects.

Original language	English
Pages (from-to)	3332-3335
Number of pages	4
Journal	IEEE Transactions on Magnetics
Volume	37
Issue number	5 I
DOIs	https://doi.org/10.1109/20.952607
Publication status	Published - 2001 Sept
Externally published	Yes
Event	Ninth Biennial Electromagnetic Field Computation (CEFC) - Milwaukee, WI, United States Duration: 2001 Jun 4 → 2001 Jun 7

Bibliographical note

Funding Information:
Manuscript received June 5, 2000. This work was supported in part by the Korea-UK scientific collaboration program. K. Y. Kim and S. H. Lim are with the Korea Institute of Science and Technology, Seoul 136-791 Korea (e-mail: [email protected] and [email protected]). G. S. Park is with the Department of Electrical Engineering, Korea Maritime University, Pusan 606-791 Korea (e-mail: [email protected]). M. H. Blamire and J. E. Evetts are with the Department of Materials Science, University of Cambridge, Cambridge CB2 3QZ, UK (e-mail: {mb52; jee2}@cam.ac.uk). Publisher Item Identifier S 0018-9464(01)07925-0.

Keywords

Magnetic sensor
Shape anisotropy
Single domain model
Spin valve

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/20.952607

Cite this

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abstract = "For the application of giant magnetoresistance (GMR) devices such as magnetic recording head or magnetic field sensors, spin valves are patterned on micron scales. In an attempt to understand shape anisotropy effect and switching behaviors of patterned structure, we measured GMR responses of patterned stripes with different aspect ratios and angular dependence of GMR responses with respect to the applied field angles. In case of lower aspect ratio (20:6), MR ratio decreased gradually with the increase in angle between applied field and pinning direction. In case of high aspect ratio (20:2), MR ratio did not decrease up to a certain angle, after that down to the lower value rapidly. In addition, there is increase in coercivities of free and pinned layers, which is due to the shape anisotropy with respect to the high aspect ratio. This trend agrees well with the simulated GMR curves using single domain model where we consider on self-demagnetization and interlayer magnetostatic coupling effects.",

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note = "Funding Information: Manuscript received June 5, 2000. This work was supported in part by the Korea-UK scientific collaboration program. K. Y. Kim and S. H. Lim are with the Korea Institute of Science and Technology, Seoul 136-791 Korea (e-mail: [email protected] and [email protected]). G. S. Park is with the Department of Electrical Engineering, Korea Maritime University, Pusan 606-791 Korea (e-mail: [email protected]). M. H. Blamire and J. E. Evetts are with the Department of Materials Science, University of Cambridge, Cambridge CB2 3QZ, UK (e-mail: {mb52; jee2}@cam.ac.uk). Publisher Item Identifier S 0018-9464(01)07925-0.; Ninth Biennial Electromagnetic Field Computation (CEFC) ; Conference date: 04-06-2001 Through 07-06-2001",

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AU - Evetts, J. E.

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AB - For the application of giant magnetoresistance (GMR) devices such as magnetic recording head or magnetic field sensors, spin valves are patterned on micron scales. In an attempt to understand shape anisotropy effect and switching behaviors of patterned structure, we measured GMR responses of patterned stripes with different aspect ratios and angular dependence of GMR responses with respect to the applied field angles. In case of lower aspect ratio (20:6), MR ratio decreased gradually with the increase in angle between applied field and pinning direction. In case of high aspect ratio (20:2), MR ratio did not decrease up to a certain angle, after that down to the lower value rapidly. In addition, there is increase in coercivities of free and pinned layers, which is due to the shape anisotropy with respect to the high aspect ratio. This trend agrees well with the simulated GMR curves using single domain model where we consider on self-demagnetization and interlayer magnetostatic coupling effects.

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Effects of the shape anisotropy on the giant magnetoresistance properties

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

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