Keyphrases
Indium Gallium Nitride (InGaN)
100%
Multiple Quantum Wells
100%
Indium
100%
Effect of Thermal Treatment
100%
Hydrogen Treatment
100%
Indium Segregation
100%
Optical Properties
40%
Metal-organic Chemical Vapor Deposition (MOCVD)
20%
Photoluminescence
20%
Annealing Process
20%
High-resolution Transmission Electron Microscopy (HRTEM)
20%
Structural Properties
20%
Growth Temperature
20%
Transmission Electron Microscopy Analysis
20%
Randomly Distributed
20%
Indium Content
20%
Misfit Dislocation
20%
Normal Growth
20%
Growth Interruption
20%
High-temperature Annealing
20%
Dot-like
20%
Luminescence Centers
20%
Engineering
Quantum Well
100%
Rich Region
100%
Annealing Process
33%
Chemical Vapor Deposition
33%
Quantum Dot
33%
Growth Temperature
33%
High Resolution
33%
Vapor Deposition
33%
Structural Property
33%
Indium Content
33%
Misfit Dislocation
33%
Material Science
Quantum Well
100%
Indium
100%
Quantum Dot
12%
Annealing
12%
Photoluminescence
12%
Optical Property
12%
High-Resolution Transmission Electron Microscopy
12%
Chemical Vapor Deposition
12%
Electron Microscopy
12%
Structural Property
12%
Dislocation (Crystal)
12%
Physics
Indium
100%
Multiple Quantum Well
100%
Quantum Dot
12%
Transmission Electron Microscopy
12%
High Resolution
12%
Metalorganic Chemical Vapor Deposition
12%
Optical Property
12%
Photoluminescence
12%
Chemical Engineering
Indium
100%
Growth Temperature
12%
Metallorganic Chemical Vapor Deposition
12%