Effects of vanadium substitution on the electrical performance of amorphous SrBi2Ta2O9 thin-film capacitors

Min Gyu Kang, Kwang Hwan Cho, Sahn Nahm, Seok Jin Yoon, Chong Yun Kang

Research output: Contribution to journalArticlepeer-review

Abstract

The effects of vanadium substitution on the dielectric properties of amorphous SrBi2Ta2O9 (SBT) thin films have been investigated. Vanadium substitution at the Ta site exists in the V3+ valence state and acts as an acceptor, reducing the number of intrinsic oxygen vacancies and the leakage current of the amorphous SBT thin films. Furthermore, the dielectric properties are also improved. The leakage current values of the 92 and 31 nm thick SBTV thin-film capacitors were 8.8 nA cm-2 and 0.62 μA cm-2 at 1 V, respectively.

Original languageEnglish
Pages (from-to)45-48
Number of pages4
JournalScripta Materialia
Volume77
DOIs
Publication statusPublished - 2014 Apr 15

Bibliographical note

Funding Information:
This research was supported by the Fundamental R&D Program for Core Technology of Materials funded by the Ministry of Knowledge Economy and by the KIST Institutional Program (Project Nos. 2E24070 and 2E24001).

Keywords

  • Amorphous
  • Leakage current
  • SrBiTaO
  • Thin-film capacitors
  • Vanadium

ASJC Scopus subject areas

  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering
  • Metals and Alloys

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