Effects of vanadium substitution on the electrical performance of amorphous SrBi2Ta2O9 thin-film capacitors

Min Gyu Kang; Kwang Hwan Cho; Sahn Nahm; Seok Jin Yoon; Chong Yun Kang

doi:10.1016/j.scriptamat.2014.01.015

Effects of vanadium substitution on the electrical performance of amorphous SrBi₂Ta₂O₉ thin-film capacitors

Min Gyu Kang
, Kwang Hwan Cho
, Sahn Nahm
, Seok Jin Yoon
, Chong Yun Kang^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

The effects of vanadium substitution on the dielectric properties of amorphous SrBi₂Ta₂O₉ (SBT) thin films have been investigated. Vanadium substitution at the Ta site exists in the V³⁺ valence state and acts as an acceptor, reducing the number of intrinsic oxygen vacancies and the leakage current of the amorphous SBT thin films. Furthermore, the dielectric properties are also improved. The leakage current values of the 92 and 31 nm thick SBTV thin-film capacitors were 8.8 nA cm^-2 and 0.62 μA cm^-2 at 1 V, respectively.

Original language	English
Pages (from-to)	45-48
Number of pages	4
Journal	Scripta Materialia
Volume	77
DOIs	https://doi.org/10.1016/j.scriptamat.2014.01.015
Publication status	Published - 2014 Apr 15

Bibliographical note

Funding Information:
This research was supported by the Fundamental R&D Program for Core Technology of Materials funded by the Ministry of Knowledge Economy and by the KIST Institutional Program (Project Nos. 2E24070 and 2E24001).

Keywords

Amorphous
Leakage current
SrBiTaO
Thin-film capacitors
Vanadium

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering
Metals and Alloys

Access to Document

10.1016/j.scriptamat.2014.01.015

Cite this

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title = "Effects of vanadium substitution on the electrical performance of amorphous SrBi2Ta2O9 thin-film capacitors",

abstract = "The effects of vanadium substitution on the dielectric properties of amorphous SrBi2Ta2O9 (SBT) thin films have been investigated. Vanadium substitution at the Ta site exists in the V3+ valence state and acts as an acceptor, reducing the number of intrinsic oxygen vacancies and the leakage current of the amorphous SBT thin films. Furthermore, the dielectric properties are also improved. The leakage current values of the 92 and 31 nm thick SBTV thin-film capacitors were 8.8 nA cm-2 and 0.62 μA cm-2 at 1 V, respectively.",

keywords = "Amorphous, Leakage current, SrBiTaO, Thin-film capacitors, Vanadium",

author = "Kang, \{Min Gyu\} and Cho, \{Kwang Hwan\} and Sahn Nahm and Yoon, \{Seok Jin\} and Kang, \{Chong Yun\}",

note = "Funding Information: This research was supported by the Fundamental R\&D Program for Core Technology of Materials funded by the Ministry of Knowledge Economy and by the KIST Institutional Program (Project Nos. 2E24070 and 2E24001).",

year = "2014",

month = apr,

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doi = "10.1016/j.scriptamat.2014.01.015",

language = "English",

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T1 - Effects of vanadium substitution on the electrical performance of amorphous SrBi2Ta2O9 thin-film capacitors

AU - Kang, Min Gyu

AU - Cho, Kwang Hwan

AU - Nahm, Sahn

AU - Yoon, Seok Jin

AU - Kang, Chong Yun

N1 - Funding Information: This research was supported by the Fundamental R&D Program for Core Technology of Materials funded by the Ministry of Knowledge Economy and by the KIST Institutional Program (Project Nos. 2E24070 and 2E24001).

PY - 2014/4/15

Y1 - 2014/4/15

N2 - The effects of vanadium substitution on the dielectric properties of amorphous SrBi2Ta2O9 (SBT) thin films have been investigated. Vanadium substitution at the Ta site exists in the V3+ valence state and acts as an acceptor, reducing the number of intrinsic oxygen vacancies and the leakage current of the amorphous SBT thin films. Furthermore, the dielectric properties are also improved. The leakage current values of the 92 and 31 nm thick SBTV thin-film capacitors were 8.8 nA cm-2 and 0.62 μA cm-2 at 1 V, respectively.

AB - The effects of vanadium substitution on the dielectric properties of amorphous SrBi2Ta2O9 (SBT) thin films have been investigated. Vanadium substitution at the Ta site exists in the V3+ valence state and acts as an acceptor, reducing the number of intrinsic oxygen vacancies and the leakage current of the amorphous SBT thin films. Furthermore, the dielectric properties are also improved. The leakage current values of the 92 and 31 nm thick SBTV thin-film capacitors were 8.8 nA cm-2 and 0.62 μA cm-2 at 1 V, respectively.

KW - Amorphous

KW - Leakage current

KW - SrBiTaO

KW - Thin-film capacitors

KW - Vanadium

UR - https://www.scopus.com/pages/publications/84896730296

U2 - 10.1016/j.scriptamat.2014.01.015

DO - 10.1016/j.scriptamat.2014.01.015

M3 - Article

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