Effects of V/III ratio on ordering and antiphase boundaries in GaInP layers

Tae Yeon Seong; Joon Hyung Kim; Y. S. Chun; G. B. Stringfellow

doi:10.1063/1.119113

Effects of V/III ratio on ordering and antiphase boundaries in GaInP layers

Tae Yeon Seong, Joon Hyung Kim, Y. S. Chun, G. B. Stringfellow

Research output: Contribution to journal › Article › peer-review

18 Citations (Scopus)

Abstract

Transmission electron microscope (TEM) and transmission electron diffraction (TED) studies have been performed to investigate the effects of V/III ratio on ordering and antiphase boundaries (APBs) in organometallic vapor phase epitaxial Ga_0.5In_0.5P layers grown onto (001) GaAs vicinal substrates at 670°C. TED and TEM examination showed that the degree of order is higher in the layer grown using a V/III ratio of 160 than in the layer grown using a V/III ratio of 40. TEM results showed that the higher V/III ratio could be used to suppress APBs. In addition, the growth of order-induced heterostructures, where the V/III ratio is increased abruptly during growth, could be used to block the propagation of APBs. Mechanisms are proposed to explain these phenomena.

Original language	English
Pages (from-to)	3137-3139
Number of pages	3
Journal	Applied Physics Letters
Volume	70
Issue number	23
DOIs	https://doi.org/10.1063/1.119113
Publication status	Published - 1997 Jun 9
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Effects of V/III ratio on ordering and antiphase boundaries in GaInP layers",

abstract = "Transmission electron microscope (TEM) and transmission electron diffraction (TED) studies have been performed to investigate the effects of V/III ratio on ordering and antiphase boundaries (APBs) in organometallic vapor phase epitaxial Ga0.5In0.5P layers grown onto (001) GaAs vicinal substrates at 670°C. TED and TEM examination showed that the degree of order is higher in the layer grown using a V/III ratio of 160 than in the layer grown using a V/III ratio of 40. TEM results showed that the higher V/III ratio could be used to suppress APBs. In addition, the growth of order-induced heterostructures, where the V/III ratio is increased abruptly during growth, could be used to block the propagation of APBs. Mechanisms are proposed to explain these phenomena.",

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T1 - Effects of V/III ratio on ordering and antiphase boundaries in GaInP layers

AU - Seong, Tae Yeon

AU - Kim, Joon Hyung

AU - Chun, Y. S.

AU - Stringfellow, G. B.

PY - 1997/6/9

Y1 - 1997/6/9

N2 - Transmission electron microscope (TEM) and transmission electron diffraction (TED) studies have been performed to investigate the effects of V/III ratio on ordering and antiphase boundaries (APBs) in organometallic vapor phase epitaxial Ga0.5In0.5P layers grown onto (001) GaAs vicinal substrates at 670°C. TED and TEM examination showed that the degree of order is higher in the layer grown using a V/III ratio of 160 than in the layer grown using a V/III ratio of 40. TEM results showed that the higher V/III ratio could be used to suppress APBs. In addition, the growth of order-induced heterostructures, where the V/III ratio is increased abruptly during growth, could be used to block the propagation of APBs. Mechanisms are proposed to explain these phenomena.

AB - Transmission electron microscope (TEM) and transmission electron diffraction (TED) studies have been performed to investigate the effects of V/III ratio on ordering and antiphase boundaries (APBs) in organometallic vapor phase epitaxial Ga0.5In0.5P layers grown onto (001) GaAs vicinal substrates at 670°C. TED and TEM examination showed that the degree of order is higher in the layer grown using a V/III ratio of 160 than in the layer grown using a V/III ratio of 40. TEM results showed that the higher V/III ratio could be used to suppress APBs. In addition, the growth of order-induced heterostructures, where the V/III ratio is increased abruptly during growth, could be used to block the propagation of APBs. Mechanisms are proposed to explain these phenomena.

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Effects of V/III ratio on ordering and antiphase boundaries in GaInP layers

Abstract

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