Effects of ZnO thin film surface structure on nanowires grown by MOCVD

A. Young Kim; Samseok Jang; Do Han Lee; So Young Yim; Dong Jin Byun

Effects of ZnO thin film surface structure on nanowires grown by MOCVD

A. Young Kim, Samseok Jang, Do Han Lee, So Young Yim, Dong Jin Byun

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Zinc oxide (ZnO) nanowires (NWs) were grown on ZnO thin films by chemical vapor deposition (CVD) at 600 °C. The ZnO thin films were prepared by metal-organic chemical vapor deposition (MOCVD) at substrate temperatures of 400 - 700 °C at 4 Torr. High-resolution X-ray diffraction measurements showed that the ZnO thin film had a wurtzite structure, with better crystal quality when prepared at higher temperature. The ZnO thin film on sapphire had a uniform 0.1 μm thickness and root-mean-square roughness of 4 - 7 nm in 1 × 1 μm² areas determined by field-emission scanning electron microscopy and atomic force microscopy, respectively.

Original language	English
Title of host publication	ICCM International Conferences on Composite Materials
Publication status	Published - 2011 Dec 1
Event	18th International Conference on Composites Materials, ICCM 2011 - Jeju, Korea, Republic of Duration: 2011 Aug 21 → 2011 Aug 26

Other

Other	18th International Conference on Composites Materials, ICCM 2011
Country/Territory	Korea, Republic of
City	Jeju
Period	11/8/21 → 11/8/26

Keywords

Metal organic chemical vapor deposition (MOCVD)
Nanowire
Thin film
ZnO

ASJC Scopus subject areas

General Engineering
Ceramics and Composites

Cite this

@inproceedings{f5ec00feeb644094b61815e6d073d1e3,

title = "Effects of ZnO thin film surface structure on nanowires grown by MOCVD",

abstract = "Zinc oxide (ZnO) nanowires (NWs) were grown on ZnO thin films by chemical vapor deposition (CVD) at 600 °C. The ZnO thin films were prepared by metal-organic chemical vapor deposition (MOCVD) at substrate temperatures of 400 - 700 °C at 4 Torr. High-resolution X-ray diffraction measurements showed that the ZnO thin film had a wurtzite structure, with better crystal quality when prepared at higher temperature. The ZnO thin film on sapphire had a uniform 0.1 μm thickness and root-mean-square roughness of 4 - 7 nm in 1 × 1 μm2 areas determined by field-emission scanning electron microscopy and atomic force microscopy, respectively.",

keywords = "Metal organic chemical vapor deposition (MOCVD), Nanowire, Thin film, ZnO",

author = "Kim, {A. Young} and Samseok Jang and Lee, {Do Han} and Yim, {So Young} and Byun, {Dong Jin}",

year = "2011",

month = dec,

day = "1",

language = "English",

booktitle = "ICCM International Conferences on Composite Materials",

note = "18th International Conference on Composites Materials, ICCM 2011 ; Conference date: 21-08-2011 Through 26-08-2011",

}

TY - GEN

T1 - Effects of ZnO thin film surface structure on nanowires grown by MOCVD

AU - Kim, A. Young

AU - Jang, Samseok

AU - Lee, Do Han

AU - Yim, So Young

AU - Byun, Dong Jin

PY - 2011/12/1

Y1 - 2011/12/1

N2 - Zinc oxide (ZnO) nanowires (NWs) were grown on ZnO thin films by chemical vapor deposition (CVD) at 600 °C. The ZnO thin films were prepared by metal-organic chemical vapor deposition (MOCVD) at substrate temperatures of 400 - 700 °C at 4 Torr. High-resolution X-ray diffraction measurements showed that the ZnO thin film had a wurtzite structure, with better crystal quality when prepared at higher temperature. The ZnO thin film on sapphire had a uniform 0.1 μm thickness and root-mean-square roughness of 4 - 7 nm in 1 × 1 μm2 areas determined by field-emission scanning electron microscopy and atomic force microscopy, respectively.

AB - Zinc oxide (ZnO) nanowires (NWs) were grown on ZnO thin films by chemical vapor deposition (CVD) at 600 °C. The ZnO thin films were prepared by metal-organic chemical vapor deposition (MOCVD) at substrate temperatures of 400 - 700 °C at 4 Torr. High-resolution X-ray diffraction measurements showed that the ZnO thin film had a wurtzite structure, with better crystal quality when prepared at higher temperature. The ZnO thin film on sapphire had a uniform 0.1 μm thickness and root-mean-square roughness of 4 - 7 nm in 1 × 1 μm2 areas determined by field-emission scanning electron microscopy and atomic force microscopy, respectively.

KW - Metal organic chemical vapor deposition (MOCVD)

KW - Nanowire

KW - Thin film

KW - ZnO

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UR - http://www.scopus.com/inward/citedby.url?scp=84875929852&partnerID=8YFLogxK

M3 - Conference contribution

BT - ICCM International Conferences on Composite Materials

T2 - 18th International Conference on Composites Materials, ICCM 2011

Y2 - 21 August 2011 through 26 August 2011

ER -

Effects of ZnO thin film surface structure on nanowires grown by MOCVD

Abstract

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Keywords

ASJC Scopus subject areas

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